Fin-like field effect transistor (FinFET) device and method of manufacturing same

1. A method of forming a FinFET device, the method comprising:

providing a semiconductor substrate;

forming a first fin structure and a second fin structure over the semiconductor substrate;

forming a gate structure over a portion of the first and second fin structures, such that the gate structure traverses the first and second fin structures;

epitaxially growing a first semiconductor material on exposed portions of the first and second fin structures, such that the exposed portions of the first and second fin structures are merged together;

etching back the first semiconductor material; and

epitaxially growing a second semiconductor material over the fin semiconductor material after etching back the first semiconductor material.

2. The method of claim 1 further including:

forming an isolation structure between the first and second fin structures, such that the first and second fin structures are isolated from one another; and

etching back the isolation structure before epitaxially growing the first semiconductor material.

3. The method of claim 1 wherein:

the epitaxially growing the first semiconductor material includes epitaxially growing silicon; and

the epitaxially growing the second semiconductor material includes epitaxially growing silicon germanium.

4. A method comprising:

providing a semiconductor substrate;

forming a gate structure over a portion of the first and second fin structures, such that the gate structure traverses the first and second fin structures;

epitaxially growing a first semiconductor material on exposed portions of the first and second fin structures, such that the exposed portions of the first and second fin structures are merged together, wherein the epitaxially growing the first semiconductor material includes epitaxially growing silicon;

epitaxially growing a second semiconductor material over the first semiconductor material, wherein the epitaxially growing the second semiconductor material includes epitaxially growing silicon germanium; and

etching back the first semiconductor material before epitaxially growing the second semiconductor material.

5. The method of claim 4 further including:

forming an isolation structure between the first and second fin structures, such that the first and second fin structures are isolated from one another; and

etching back the isolation structure before epitaxially growing the first semiconductor material.

6. The method of claim 4 , further comprising forming an isolation structure over the substrate such that the isolation structure extends from the first fin structure to the second fin structure; and

after forming the gate structure, recessing the isolation structure by removing a portion of the isolation structure, and

wherein epitaxially growing the first semiconductor material on exposed portions of the first and second fin structures includes epitaxially growing the first semiconductor material over the recessed isolation structure.

7. The method of claim 4 , wherein etching back the first semiconductor material before epitaxially growing the second semiconductor material includes removing a portion of the first and second fin structures.

8. The method of claim 4 further including removing a portion of the first and second fin structures before epitaxially growing the first semiconductor material.

9. The method of claim 8 wherein:

the first and second fins include a first material portion and a second material portion, the first and second fins each having a source region and a drain region separated by the gate structure, the source and drain regions of each fin defining a channel therebetween; and

the removing the portion of the first and second fins includes partially removing the second material portion from the source and drain regions of the first and second fins.

10. The method of claim 8 wherein:

the first and second fins include a first material portion and a second material portion, the first and second fins each having a source region and a drain region separated by the gate structure, the source and drain regions of each fin defining a channel therebetween; and

the removing the portion of the first and second fins includes partially removing the second material portion from the source and drain regions of the first and second fins.

11. A method comprising:

providing a semiconductor substrate;

forming a plurality of fins over the semiconductor substrate, the fins being isolated from each other by isolation structure;

forming a gate structure over a portion of each fin, such that the gate structure traverses the plurality of fins;

after forming the gate structure, recessing the isolation structure by removing a portion of the isolation structure;

forming a fin template on exposed portions of the fins and the recessed isolation structure; and

epitaxially growing a semiconductor material over the fin template.

12. The method claim 11 wherein the forming the fin template includes epitaxially growing another semiconductor material on exposed portions of each of the fins, such that the fins are merged together.

13. The method of claim 11 , further comprising forming spacers on sidewalls of the gate structure.

14. The method of claim 11 further including etching back the fin template before epitaxially growing the semiconductor material over the fin template.

15. The method of claim 14 wherein:

the gate structure separates a source region and a drain region of each of the fins, the source and drain regions of each fin defining a channel therebetween; and

the etching back the fin template includes exposing a portion of the channel of each of the fins.

16. The method of claim 11 , wherein forming the fin template on exposed portions of the fins and the recessed isolation structure includes epitaxially growing another semiconductor material on exposed portions of the fins and the recessed isolation structure.

17. The method of claim 16 , wherein the another semiconductor material includes silicon, and

wherein the semiconductor material include silicon germanium.

18. The method of claim 11 wherein the forming the plurality of fins includes forming the fins having a first material portion and a second material portion, each of the fins including a source region and a drain region separated by the gate structure, the source and drain regions of each fin defining a channel therebetween.

19. The method of claim 18 further including completely removing the second material portion from the source and drain regions of the fins before forming the fin template.

20. The method of claim 18 further including partially removing the second material portion from the source and drain regions of the fins before forming the fin template.