Conductive bridging memory device and method for manufacturing same
According to one embodiment, a conductive bridging memory device includes a first wiring layer having a plurality of first wiring portions extending in a first direction, a second wiring layer having a plurality of second wiring portions extending in a second direction crossing the first direction, and a resistance change layer provided continuously along a plane having the first direction and the second direction between the first wiring layer and the second wiring layer. Each of the first wiring portions includes a first wiring extending in the first direction. Each of the second wiring portions includes a second wiring extending in the second direction, and an ion metal layer provided between the second wiring and the resistance change layer and extending in the second direction.
1. A conductive bridging memory device comprising:
a first wiring layer including a plurality of first wiring portions extending in a first direction, the plurality of first wiring portions being arranged along a second direction crossing the first direction;
a second wiring layer including a plurality of second wiring portions extending in the second direction, the plurality of second wiring portions being arranged along the first direction, the second wiring layer being disposed in a third direction from the first wiring layer, the third direction crossing both the first direction and the second direction; and
a resistance change layer provided along a plane including the first direction and the second direction between the first wiring layer and the second wiring layer, the resistance change layer being provided continuously across the plurality of first wiring portions and the plurality of second wiring portions,
one of the first wiring portions including:
a first wiring extending in the first direction across the plurality of second wiring portions, and
one of the second wiring portions including:
a second wiring extending in the second direction across the plurality of first wiring portions; and
an ion metal layer provided between the second wiring and the resistance change layer and extending in the second direction across the plurality of first wiring portions.
2. The device according to claim 1 , wherein each of the first wiring portions further includes a counter electrode layer provided between the first wiring and the resistance change layer and extending in the first direction.
3. The device according to claim 2 , wherein the counter electrode layer contains silicon doped with impurity.
4. The device according to claim 1 , wherein the resistance change layer contains silicon, and the ion metal layer contains one or more metals selected from the group consisting of silver, copper, nickel, and cobalt.
5. The device according to claim 1 , wherein
the first wiring layers and the second wiring layers are respectively provided in a plurality and alternately stacked, and
the resistance change layer is provided between each adjacent pair of the first wiring layer and the second wiring layer.