Semiconductor device having strained fin structure and method of making the same
A semiconductor device includes a semiconductor substrate, at least a first fin structure, at least a second fin structure, a first gate, a second gate, a first source/drain region and a second source/drain region. The semiconductor substrate has at least a first active region to dispose the first fin structure and at least a second active region to dispose the second fin structure. The first/second fin structure partially overlapped by the first/second gate has a first/second stress, and the first stress and the second stress are different from each other. The first/second source/drain region is disposed in the first/second fin structure at two sides of the first/second gate.
1. A method for forming a semiconductor device, comprising:
providing a semiconductor substrate comprising a first active region and a second active region;
forming a semiconductor layer having a first stress on the semiconductor substrate;
performing an ion implantation process to modify the semiconductor layer in the second active region to have a second stress;
patterning the semiconductor layer for forming at least a first fin structure in the first active region, wherein the overall first fin structure has the first stress; and
patterning the semiconductor layer for forming at least a second fin structure in the second active region, wherein the overall second fin structure has the second stress different from the first stress.
2. The method for forming a semiconductor device according to claim 1 , further comprising:
forming a first gate partially overlapping the first fin structure;
forming a second gate partially overlapping the second fin structure;
forming a first source/drain region in the first fin structure at two sides of the first gate; and
forming a second source/drain region in the second fin structure at two sides of the second gate.
3. The method for forming a semiconductor device according to claim 2 , wherein at least one of the first gate and the second gate comprises a metal gate.
4. The method for forming a semiconductor device according to claim 1 , wherein each of the fin structures comprises a silicon-germanium-carbon material denoted as (Si (1-x-y) Ge x C y ), wherein x and y are positive numbers between 0 and 1 respectively.
5. The method for forming a semiconductor device according to claim 4 , wherein the first active region comprises an n-type metal oxide semiconductor transistor (NMOS) region, and the material of the overall first fin structure comprises a ratio of y to x larger than 0.1.
6. The method for forming a semiconductor device according to claim 4 , wherein the second active region comprises a p-type metal oxide semiconductor transistor (PMOS) region, and the material of the overall second fin structure comprises a ratio of y to x smaller than 0.1.
7. The method for forming a semiconductor device according to claim 1 , wherein the ion implantation process is performed after patterning the semiconductor layer.
8. The method for forming a semiconductor device according to claim 1 , wherein the semiconductor layer comprises silicon, silicon-germanium-carbon (Si (1-x-y) Ge x C y ), silicon-carbon (Si (1-y) C y ) or silicon-germanium (Si (1-x) Ge x ), wherein x and y are zero or a positive number between 0 and 1 respectively.
9. The method for forming a semiconductor device according to claim 1 , wherein the semiconductor substrate comprises a silicon-on-insulator (SOI) substrate or a bulk silicon substrate.