Memory system
According to one embodiment, a memory module which includes a plurality of nonvolatile memory cells with a plurality of pages and line-and-space word lines to which more than one of the memory cells are connected, and a controller which receives write data from a host device.
1. A memory system comprising:
a plurality of nonvolatile memory cells with a plurality of pages;
a memory module which comprises a plurality of nonvolatile memory cells with a plurality of pages and line-and-space word lines to which more than one of the memory cells are connected; and
a controller which receives write data from a host device,
creates an error correction code in units of one or more of the memory cells based on the write data stored in the memory cells,
adds the error correction code to the write data,
stores the error-correction-code-added write data in the memory module, and
makes an error correction of the error-correction-code-added data supplied from the memory module by using the error correction code,
wherein the controller comprises a table where a plurality of areas are specified for each threshold distribution of data in the memory cells and creates the error correction code for each of the memory cells based on the write data stored in the memory cells and the table.
2. The memory system of claim 1 , wherein the table is such that numbers are allocated to the areas in ascending order of threshold voltage and the codes of the areas correspond to the numbers of the areas, and
the controller creates the error correction code for each of the memory cells based on the write data stored in the memory cells and the codes.
3. The memory system of claim 2 , wherein the controller, if it determines in the error correction that the data is the same as that at the time of reception from the host device and has shifted to a different area, treats a memory cell that stores the data as a latent defective memory cell.
4. The memory system of claim 2 , wherein the controller, if it detects more than a specific number of latent defective memory cells on more than one of the word lines comprised in the same erase block, moves all the data stored in the memory cells belonging to the same erase block to memory cells belonging to another erase block.
5. The memory system of claim 1 , wherein the page comprises
a first area which stores write data provided by the host device, and
a second area which stores an error correction code encoded based on data stored in the first area.