Flip-chip light emitting diode and fabrication method
A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode. A conductive connection portion on the n-type semiconductor layer connects the electrode region of the n-type semiconductor layer and the light-emitting region, realizing vertical current injection into the light-emitting epitaxial layer when an external power is connected.
1. A flip-chip light emitting diode (LED), comprising:
a substrate having a P-type pad electrode and an N-type pad electrode disposed thereon;
a light-emitting epitaxial layer flip-chip mounted over the substrate, including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, wherein the n-type semiconductor layer has a light-emitting region, an isolation region, and an electrode region, wherein the light-emitting region and the electrode region are electrically isolated by the isolation region; wherein the active layer and the p-type semiconductor layer are below the light-emitting region; wherein the p-type semiconductor layer is coupled with the P-type pad electrode; and the electrode region of the n-type semiconductor layer is coupled with the N-type pad electrode;
a conductive connection portion disposed over the n-type semiconductor layer and coupled with the electrode region of the n-type semiconductor layer and the light-emitting region, thereby realizing vertical current injection into the light-emitting epitaxial layer upon application of an external power; and
a current expansion structure distributed at the n-type semiconductor layer in the light-emitting region.
2. The LED of claim 1 , wherein: in the n-type semiconductor layer, the isolation region is formed around the electrode region to ensure complete electrical isolation between the electrode region and the light-emitting region.
3. The LED of claim 1 , wherein the conductive connection portion is a transparent conductive layer.
4. The LED of claim 3 , further comprising a passivation layer over the transparent conductive layer.
5. The LED of claim 1 , wherein: the isolation region of the n-type semiconductor layer is formed by an insulation portion via ion injection to realize electrical isolation between the light-emitting region and the electrode region.
6. The LED of claim 1 , wherein the n-type semiconductor layer in the electrode region is coupled with the N-type pad electrode on the substrate via a bonding metal layer.
7. The LED of claim 1 , wherein the p-type semiconductor layer corresponding to and below the n-type semiconductor layer in the electrode region forms a short circuit connection with the active layer, so as to connect the n-type semiconductor layer in the electrode region and the N-type pad electrode on the substrate.
8. The LED of claim 1 , wherein the n-type semiconductor layer in the light-emitting region and the n-type semiconductor layer in the electrode region are epitaxial layers of a same material.
9. A flip-chip light emitting diode (LED), comprising:
a substrate having a P-type pad electrode and an N-type pad electrode disposed thereon;
a light-emitting epitaxial layer flip-chip mounted over the substrate, including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, wherein the n-type semiconductor layer has a light-emitting region, an isolation region, and an electrode region, wherein the light-emitting region and the electrode region are electrically isolated by the isolation region; wherein the active layer and the p-type semiconductor layer are below the light-emitting region; wherein the p-type semiconductor layer is coupled with the P-type pad electrode; and the electrode region of the n-type semiconductor layer is coupled with the N-type pad electrode;
a conductive connection portion disposed over the n-type semiconductor layer and coupled with the electrode region of the n-type semiconductor layer and the light-emitting region, thereby realizing vertical current injection into the light-emitting epitaxial layer upon application of an external power,
wherein the conductive connection portion is a transparent conductive layer; and
a current expansion structure distributed in the transparent conductive layer.
10. A light emitting system comprising a plurality of flip-chip light emitting diodes (LEDs), each LED including:
a substrate having a P-type pad electrode and an N-type pad electrode disposed thereon;
a light-emitting epitaxial layer flip-chip mounted over the substrate, including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, wherein the n-type semiconductor layer has a light-emitting region, an isolation region, and an electrode region, wherein the light-emitting region and the electrode region are electrically isolated by the isolation region; wherein the active layer and the p-type semiconductor layer are below the light-emitting region; wherein the p-type semiconductor layer is coupled with the P-type pad electrode; and the electrode region of the n-type semiconductor layer is coupled with the N-type pad electrode;
a conductive connection portion disposed over the n-type semiconductor layer and coupled with the electrode region of the n-type semiconductor layer and the light-emitting region, thereby realizing vertical current injection into the light-emitting epitaxial layer upon application of an external power; and
a current expansion structure distributed at the n-type semiconductor layer in the light-emitting region.
11. The system of claim 10 , wherein: in the n-type semiconductor layer, the isolation region is formed around the electrode region to ensure complete electrical isolation between the electrode region and the light-emitting region.
12. The system of claim 10 , wherein the conductive connection portion is a transparent conductive layer.
13. The system of claim 12 , further comprising a passivation layer over the transparent conductive layer.
14. The system of claim 10 , wherein: the isolation region of the n-type semiconductor layer is formed by an insulation portion via ion injection to realize electrical isolation between the light-emitting region and the electrode region.
15. The system of claim 10 , wherein the n-type semiconductor layer in the electrode region is coupled with the N-type pad electrode on the substrate via a bonding metal layer.
16. The system of claim 10 , wherein the p-type semiconductor layer corresponding to and below the n-type semiconductor layer in the electrode region forms a short circuit connection with the active layer, so as to connect the n-type semiconductor layer in the electrode region and the N-type pad electrode on the substrate, and wherein the n-type semiconductor layer in the light-emitting region and the n-type semiconductor layer in the electrode region are epitaxial layers of a same material.
17. A light emitting system comprising a plurality of flip-chip light emitting diodes (LEDs), each LED including:
a substrate having a P-type pad electrode and an N-type pad electrode disposed thereon;
a light-emitting epitaxial layer flip-chip mounted over the substrate, including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, wherein the n-type semiconductor layer has a light-emitting region, an isolation region, and an electrode region, wherein the light-emitting region and the electrode region are electrically isolated by the isolation region; wherein the active layer and the p-type semiconductor layer are below the light-emitting region; wherein the p-type semiconductor layer is coupled with the P-type pad electrode; and the electrode region of the n-type semiconductor layer is coupled with the N-type pad electrode;
a conductive connection portion disposed over the n-type semiconductor layer and coupled with the electrode region of the n-type semiconductor layer and the light-emitting region, thereby realizing vertical current injection into the light-emitting epitaxial layer upon application of an external power,
wherein the conductive connection portion is a transparent conductive layer; and
a current expansion structure distributed in the transparent conductive layer.