Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode
A light-emitting element includes a first conductivity type semiconductor base, a plurality of first conductivity type protrusion-shaped semiconductors formed on the semiconductor base, and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors.
1. A light-emitting element comprising:
a first conductivity type semiconductor base having an area;
a plurality of first conductivity type protrusion-shaped semiconductors formed on the first conductivity type semiconductor base; and
a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors,
the light emitting element having a light emitting area larger than the area of the first conductivity type semiconductor base, the light emitting area being given by a total area of the second conductivity type semiconductor layer.
2. The light-emitting element as claimed in claim 1 , wherein
the first conductivity type protrusion-shaped semiconductors comprise first conductivity type rod-shaped semiconductors.
3. The light-emitting element as claimed in claim 2 , wherein
the first conductivity type rod-shaped semiconductors have a length ten times larger than a thickness thereof.
4. The light-emitting element as claimed in claim 1 , wherein
the first conductivity type protrusion-shaped semiconductors comprise first conductivity type plate-shaped semiconductors.
5. The light-emitting element as claimed in claim 1 , wherein
a transparent electrode layer is formed on the second conductivity type semiconductor layer in such a manner that the second conductivity type semiconductor layer is substantially entirely covered with the transparent electrode.
6. The light-emitting element as claimed in claim 5 , wherein
a facing gap between first conductivity type protrusion-shaped semiconductors, across which parts of the transparent electrode layer face each other, is filled with a transparent member made from a material higher in transparency than the transparent electrode layer.
7. A diode comprising:
a core part extending in an axial direction;
a first conductivity type semiconductor layer formed so as to cover the core part, the first conductivity type semiconductor layer having at least a section extending along the axial direction around the core part; and
a second conductivity type semiconductor layer that covers at least a portion of the section extending along the axial direction of the first conductivity type semiconductor layer, wherein
material of the core part and material of the first conductivity type semiconductor layer are different from each other,
a part of the section extending along the axial direction of the first conductivity type semiconductor layer is exposed, and
the core part is larger in refractive index than the first conductivity type semiconductor layer and the diode is a light-emitting diode.
8. The diode as claimed in claim 7 , wherein
the core part is larger in thermal conductivity than the first conductivity type semiconductor layer and the diode is a light-emitting diode.
9. The diode as claimed in claim 7 , wherein
the core part is larger in electrical conductivity than the first conductivity type semiconductor layer and the diode is a light-emitting diode.
10. An illumination device which includes the light-emitting diode as claimed in claim 7 .
11. A backlight which includes the light-emitting diode as claimed in claim 7 .
12. A display device which includes the light-emitting diode as claimed in claim 7 .
13. The diode as claimed in claim 7 , wherein the core part is formed of SiO 2 .
14. A light-emitting element comprising:
a first conductivity type semiconductor base;
a plurality of first conductivity type protrusion-shaped semiconductors formed on the first conductivity type semiconductor base, each protrusion-shaped semiconductor having a length and a thickness; and
a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors,
each first conductivity type protrusion-shaped semiconductor having a side wall perpendicular to the semiconductor base,
the length of the first conductivity type protrusion-shaped semiconductors being larger than the thickness thereof,
a transparent electrode layer being formed on the second conductivity type semiconductor layer in such a manner that the second conductivity type semiconductor layer is substantially entirely covered with the transparent electrode, and
a facing gap between first conductivity type protrusion-shaped semiconductors, across which parts of the transparent electrode layer face each other, being filled with a transparent member made from a material higher in transparency than the transparent electrode layer.