Thin film stack
The present disclosure is drawn to a thin film stack, which includes a substrate, a metal layer, and an adhesive layer comprising a blend of from 3 at % to 94 at % indium oxide, from 3 at % to 94 at % gallium oxide, and from 3 at % to 94 at % zinc oxide. The adhesive layer is adhered between the substrate and the metal layer.
1. A thin film stack, comprising a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, and a piezoelectric layer, the adhesive layer comprising from 3 at % to 94 at % indium oxide, from 3 at % to 94 at % gallium oxide, and from 3 at % to 94 at % zinc oxide.
2. The thin film stack of claim 1 , wherein the piezoelectric layer is attached directly to an opposing surface of the metal layer with respect to the adhesive layer, the metal layer is a metal electrode, and the thin film stack further comprises a second metal electrode positioned on the piezoelectric layer such that when the metal electrode and the second metal electrode are used to generate an electrical potential, the piezoelectric layer acts as a piezoelectric actuator.
3. The thin film stack of claim 1 , wherein the piezoelectric layer is PZT.
4. The thin film stack of claim 1 , wherein the thin film stack is an actuator for a fluid ejection device.
5. The thin film stack of claim 1 , wherein the substrate comprise a membrane from 10 Å to 10 μm in thickness, and the membrane is selected from the group of nitrides, carbides, oxides, and metals.
6. The thin film stack of claim 1 , wherein the metal layer is a metal electrode from 5 nm to 5 microns in thickness, and is selected from the group of platinum, silver, iridium, palladium, and alloys thereof.
7. The thin film stack of claim 1 , wherein the blend of indium oxide, gallium oxide, and zinc oxide comprises from 90 at % to 100 at % of the adhesive layer.
8. The thin film stack of claim 1 , wherein the adhesive layer is from 10 Å to 0.5 μm in thickness.
9. The thin film stack of claim 1 , wherein the adhesive layer, in addition to the blend, comprises from 0.05 at % to less than 3 at % of at least one dopant.
10. The thin film stack of claim 1 , wherein the adhesive layer provides adhesion between the substrate and the metal layer up to at least 1000° C. without delamination.
11. The thin film stack of claim 1 , wherein the adhesive layer comprises a first amorphous layer attached to the metal layer, a second amorphous layer attached to the substrate, and a crystalline layer therebetween.
12. A method of preparing a piezoelectric thin film stack, comprising:
adhering a first side of a metal layer to a substrate using an adhesive blend of from 3 at % to 94 at % indium oxide, from 3 at % to 94 at % gallium oxide, and from 3 at % to 94 at % zinc oxide; and
forming a piezoelectric material on a second side of the metal layer.
13. The method of claim 12 , wherein the piezoelectric material is PZT and is applied to the second side of the metal layer.
14. The method of claim 12 , wherein the blend of indium oxide, gallium oxide, and zinc oxide comprises from 90 at % to 100 at % of the adhesive blend.