IP Library Granted Patent US 9,194,834
Granted Patent B2
US 9,194,834 · App. 14/124,342 · Granted Nov 24, 2015

Chemoresistor type gas sensor having a multi-storey architecture

Inventors: Alain Gaudon (Launac, FR); Chang Hyun Shim (Toulouse, FR); Philippe Menini (Eaunes, FR); Francois Loubet (Avignonet Lauragais, FR)
Assignees: ALPHA MOS S.A.; CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
G01N27/16G01N27/125G01N27/128
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Quick Facts
Patent No.
US 9,194,834
App. No.
14/124,342
Granted
Nov 24, 2015
Kind
B2
Abstract

A multi-storey gas sensor is constructed by stacking chemoresistor type gas sensing elements and providing holes through each sensing element so gas can pass from one sensing element to the next, through the sensing layers. A rich data set can be obtained by selecting appropriate combinations of materials for the different sensing layers and varying the operating conditions of the different gas-sensing elements by: taking measurements when different combinations of sensing layers are activated, when given sensing layers are heated to different temperatures or according to different heating profiles, and/or when selected sensing layers are exposed to UV light. Sensor sensitivity and selectivity can be increased by applying UV pulses of controlled duration, and target gas species can be detected based on the transient response of the sensing layer at onset of UV irradiation. Each sensing element may have a micro-hotplate architecture.

Claims (23)

1. A gas sensor of chemoresistor type having a multi-storey structure, the sensor comprising:

a first storey comprising a sensing layer provided on an insulating layer, and measurement electrodes provided in contact with the sensing layer;

a second storey comprising a support layer supporting a second sensing layer that is a layer of selectively-activatable material spaced from the sensing layer of the first storey, and second measurement electrodes in contact with said second sensing layer;

wherein the first storey and the second storey each constitute a chemoresistor type gas sensing element, and

an activation unit for controlling activation of the selectively-activatable layer;

wherein the first and second storeys are arranged in series so that gas passes successively through the second storey to the first storey and the gas reaching the sensing layer of the first storey can be modified by activating the selectively-activatable material of the second storey.

2. A gas sensor according to claim 1 , and comprising:

control means adapted to take measurements via the measurement electrodes of the first storey at times when the layer of selectively-activatable material of the second storey is activated and de-activated, respectively, and to process said measurements to discriminate a gas presented to the gas sensor.

3. A gas sensor according to claim 2 , wherein:

holes or pores are formed through each storey for permitting the passage of gas from one storey to the next.

4. A gas sensor according to claim 3 , comprising a stack of chemoresistor type gas sensing elements, wherein different materials form the respective sensing layers of at least two different storeys in the stack.

5. A gas sensor according to claim 3 , wherein each gas sensing element has a micro-hotplate structure.

6. A gas sensor according to claim 2 , wherein:

the first and second storeys define a chamber therebetween, and

the sensing layer of the first storey and the selectively-activatable layer of the second storey are disposed on opposed surfaces of the chamber.

7. A gas sensor according to claim 1 , wherein:

holes or pores are provided through the second storey at least in a region where the selectively-activatable layer is provided, for permitting the passage of gas through the selectively-activatable layer of the second storey to the sensing layer of the first storey.

8. A gas sensor according to claim 2 , wherein the activation unit comprises a heater.

9. A gas sensor according to claim 2 , wherein the activation unit comprises a source of ultra-violet light operable to expose the selectively-activatable layer to pulses of ultraviolet light, and the gas sensor comprises a setting unit configured to control a duty ratio or duration of the ultraviolet light pulses applied by the source of ultraviolet light, in dependence on a target gas species to be detected by the gas sensor or an interfering gas species.

10. A gas sensor according to claim 2 , wherein the activation unit comprises a source of ultraviolet light operable to expose a sensing layer in the gas sensor to pulses of ultraviolet light, and the gas sensor comprises a setting unit configured to control a duty ratio or duration of the ultraviolet light pulses applied by the source of ultraviolet light, in dependence on a target gas species to be detected by the gas sensor.

11. A gas sensor according to claim 1 , comprising:

a source of ultraviolet light operable to expose one or more sensing layers in the sensor to ultraviolet light, and

an analysis unit configured to analyse measurements taken via measurement electrodes in contact with said one or more sensing layers to determine the transient response of said one or more sensing layers at onset of application of ultraviolet light.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT ASSIGNEE NAME CENTRE NATIONAL DE LA RECHERCHE PREVIOUSLY RECORDED ON REEL 031950 FRAME 0050. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jan 31, 2014
From: GAUDON, ALAIN; SHIM, CHANG HYUN; MENINI, PHILIPPE; LOUBET, FRANCOIS
To: ALPHA MOS S.A.; CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Reel/Frame 032241/0357 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 13, 2014
From: GAUDON, ALAIN; SHIM, CHANG HYUN; MENINI, PHILIPPE; LOUBET, FRANCOIS
To: ALPHA MOS S.A.; CENTRE NATIONAL DE LA RECHERCHE
Reel/Frame 031950/0050 →
Priority Claims (1)
EP 11305707 · Jun 8, 2011 · regional
Continuity (1)
Related Publication 20140105790A1 · Apr 17, 2014