Photoelectric conversion device and imaging system

1. A photoelectric conversion device, comprising:

semiconductor substrate upon which is provided

an active region, and

an isolating portion formed of an insulator which defines the active region;

a first semiconductor region of a first conductivity type, which is positioned in the active region, and constitutes a first photoelectric conversion element;

a second semiconductor region of the first conductivity type, which is positioned in the active region, and constitutes a second photoelectric conversion element;

a third semiconductor region of the first conductivity type, which is positioned in the active region;

a fourth semiconductor region of the first conductivity type, which is positioned in the active region;

a first gate electrode, positioned between the first semiconductor region and the third semiconductor region in the active region, configuring a first transfer transistor conjointly with the first semiconductor region and the third semiconductor region; and

a second gate electrode, positioned between the second semiconductor region and the fourth semiconductor region in the active region, configuring a second transfer transistor conjointly with the second semiconductor region and the fourth semiconductor region;

wherein, at a position of a side of the first gate electrode which is toward the first semiconductor region in plan view of the surface of the semiconductor substrate,

a length of the side of the first gate electrode toward the first semiconductor region, positioned in the active region, is shorter than a length of the active region along the side of the first gate electrode toward the first semiconductor region, and

a length of the side of the first gate electrode toward the first semiconductor region, positioned in the active region, is longer than a length of the first semiconductor region along the side of the first gate electrode toward the first semiconductor region.

2. The photoelectric conversion device according to claim 1 ,

wherein, at the position of a side of the second gate electrode which is toward the second semiconductor region in plan view of the surface of the semiconductor substrate,

a length of the side of the second gate electrode toward the second semiconductor region, positioned in the active region, is shorter than a width of the active region along the side of the second gate electrode toward the second semiconductor region, and

a length of the side of the second gate electrode toward the second semiconductor region, positioned in the active region, is longer than a length of the second semiconductor region along the side of the second gate electrode toward the second semiconductor region.

3. The photoelectric conversion device according to claim 1 ,

wherein a semiconductor region of a second conductivity type is provided between the first semiconductor region and the third semiconductor region.

4. The photoelectric conversion device according to claim 1 , further comprising:

an eighth semiconductor region of the second conductivity type, provided on the first semiconductor region; and

a ninth semiconductor region of the second conductivity type, provided on the second semiconductor region;

wherein the eighth semiconductor region and the ninth semiconductor region are in contact, and extend between the first gate electrode and the second gate electrode in plan view.

5. The photoelectric conversion device according to claim 1 ,

wherein the isolating portion includes

a first region including a portion positioned between the third semiconductor region and the fourth semiconductor region of the active region, where the first gate electrode and second gate electrode are positioned on the isolating portion, and

a second region other than the first region;

wherein an impurity concentration of the second conductivity type in the first region is lower than the impurity concentration of the second conductivity type in the second region.

6. The photoelectric conversion device according to claim 5 ,

wherein the first region includes a portion where the first gate electrode and the second gate electrode are positioned on the isolating portion.

7. The photoelectric conversion device according to claim 5 , further comprising:

a fifth semiconductor region of the second conductivity type, provided so as to cover an edge portion of the isolating portion;

wherein the fifth semiconductor region is provided in the second region, and is not provided in the first region.

8. The photoelectric conversion device according to claim 1 ,

wherein the isolating portion is positioned between the third semiconductor region and the fourth semiconductor region;

and wherein the edge portion of the isolating portion is positioned between the side of the first gate electrode toward the first semiconductor region, and the side of the first gate electrode toward the third semiconductor region.

9. An imaging system, comprising:

the photoelectric conversion device according to claim 1 ; and

a signal processing unit configured to process signals from the photoelectric conversion device.

10. The photoelectric conversion device according to claim 1 ,

wherein one microlens is provided to the first photoelectric conversion element and the second photoelectric conversion element.

11. The imaging system according to claim 9 ,

wherein one microlens is provided to the first photoelectric conversion element and the second photoelectric conversion element.

12. A photoelectric conversion device, comprising:

semiconductor substrate upon which is provided

an active region, and

an isolating portion formed of an insulator which defines the active region;

a first semiconductor region of a first conductivity type, which is positioned in the active region, and constitutes a first photoelectric conversion element;

a second semiconductor region of the first conductivity type, which is positioned in the active region, and constitutes a second photoelectric conversion element;

a third semiconductor region of the first conductivity type, which is positioned in the active region;

a fourth semiconductor region of the first conductivity type, which is positioned in the active region;

a first gate electrode, positioned between the first semiconductor region and the third semiconductor region in the active region, configuring a first transfer transistor conjointly with the first semiconductor region and the third semiconductor region;

a second gate electrode, positioned between the second semiconductor region and the fourth semiconductor region in the active region, configuring a second transfer transistor conjointly with the second semiconductor region and the fourth semiconductor region; and

one microlens provided to the first photoelectric conversion element and the second photoelectric conversion element;

wherein a part of the isolating portion is positioned between the third semiconductor region and the fourth semiconductor region,

and wherein a side constituting an outer edge of the isolating portion is any one of

the same as a first side of the first gate electrode toward the first semiconductor region,

the same as a second side of the first gate electrode toward the third semiconductor region, and

positioned between the first side and the second side.

13. An imaging system, comprising:

the photoelectric conversion device according to claim 12 ; and

a signal processing unit configured to process signals from the photoelectric conversion device.