IP Library › Granted Patent US 9,196,869
Granted Patent B2
US 9,196,869 · App. 13/796,703 · Granted Nov 24, 2015

Manufacturing method of light-emitting device with nano-imprinting wiring

Inventor: Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5271H01L51/5212H01L51/5228H01L51/0022H01L51/5209H01L51/5225H01L51/5275
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Quick Facts
Patent No.
US 9,196,869
App. No.
13/796,703
Granted
Nov 24, 2015
Kind
B2
Abstract

Provided is a light-emitting device in which a voltage drop is suppressed and light extraction efficiency is increased. Provided is a light-emitting device with increased productivity. Provided is a light-emitting device with high reliability. An extremely thin conductive film from 3 nm to 50 nm is used as an electrode on a light-emitting side and an auxiliary wiring is provided in contact with the electrode. When the width of the auxiliary wiring is 100 μm or less, the auxiliary wiring is hardly perceived with the naked eye, so that a light-emitting device in which light extraction efficiency is increased and luminance is obtained uniformly. The extremely thin auxiliary wiring can be formed by nanoimprinting technology. With use of nanoimprinting technology, the width of the auxiliary wiring can be reduced to 10 nm or less.

Claims (58)

1. A method for manufacturing a light-emitting device, comprising the steps of:

forming a first auxiliary wiring over an insulating surface;

forming a first electrode layer over and in contact with the first auxiliary wiring;

forming a layer containing a light-emitting organic compound over the first electrode layer;

forming a second electrode layer over the layer;

forming a second auxiliary wiring over and in contact with the second electrode layer; and

forming a graphene film over the second electrode layer and the second auxiliary wiring,

wherein the first electrode layer has a reflective property with respect to light emitted from the layer,

wherein the second electrode layer has a light-transmitting property with respect to light emitted from the layer,

wherein the first auxiliary wiring overlaps the second auxiliary wiring, and

wherein a thickness of the second electrode layer is from 3 nm to 50 nm.

2. The method according to claim 1 , wherein a width of the second auxiliary wiring is from 10 nm to 100 μm at thinnest, when seen from a direction perpendicular to the insulating surface.

3. The method according to claim 1 , wherein a width of the second auxiliary wiring is from 10 nm to 1 μm at thinnest, when seen from a direction perpendicular to the insulating surface.

4. The method according to claim 1 , wherein the second electrode layer includes a layer formed of a metal or an alloy.

5. The method according to claim 1 ,

wherein the second auxiliary wiring is arrayed in a two-dimensional pattern when seen from a direction perpendicular to the insulating surface, and

wherein a shape surrounded by the second auxiliary wiring is circular or polygonal.

6. The method according to claim 1 , wherein an upper surface of the first electrode layer has a projection and a depression.

7. The method according to claim 1 , wherein the first electrode layer is provided over a substrate containing at least one of a metal and an alloy.

8. The method according to claim 1 , further comprising the steps of:

providing a substrate over the second electrode layer, the substrate having a light-transmitting property with respect to light emitted from the layer; and

providing a lens array over and in contact with the substrate.

9. The method according to claim 1 , further comprising the steps of:

forming a sealing layer over the second electrode layer;

providing a substrate over the sealing layer, the substrate having a light-transmitting property with respect to light emitted from the layer; and

providing a lens array over and in contact with the substrate.

10. The method according to claim 9 ,

wherein a refractive index of the substrate is higher than a refractive index of the sealing layer, and

wherein a refractive index of the lens array is higher than the refractive index of the sealing layer.

11. A method for manufacturing a light-emitting device, comprising the steps of:

forming a first auxiliary wiring over an insulating surface by a nanoimprinting method;

forming a first electrode layer over and in contact with the first auxiliary wiring;

forming a layer containing a light-emitting organic compound over the first electrode layer;

forming a second electrode layer over the layer;

forming a second auxiliary wiring over and in contact with the second electrode layer by a nanoimprinting method; and

forming a graphene film over the second electrode layer and the second auxiliary wiring,

wherein the first electrode layer has a reflective property with respect to light emitted from the layer,

wherein the second electrode layer has a light-transmitting property with respect to light emitted from the layer,

wherein the first auxiliary wiring overlaps the second auxiliary wiring, and

wherein a thickness of the second electrode layer is from 3 nm to 50 nm

12. The method according to claim 11 , wherein a width of the second auxiliary wiring is from 10 nm to 100 μm at thinnest, when seen from a direction perpendicular to the insulating surface.

13. The method according to claim 11 , wherein a width of the second auxiliary wiring is from 10 nm to 1 μm at thinnest, when seen from a direction perpendicular to the insulating surface.

14. The method according to claim 11 , wherein the second electrode layer includes a layer formed of a metal or an alloy.

15. The method according to claim 11 ,

wherein the second auxiliary wiring is arrayed in a two-dimensional pattern when seen from a direction perpendicular to the insulating surface, and

wherein a shape surrounded by the second auxiliary wiring is circular or polygonal.

16. The method according to claim 11 , wherein an upper surface of the first electrode layer has a projection and a depression.

17. The method according to claim 11 , wherein the first electrode layer is provided over a substrate containing at least one of a metal and an alloy.

18. The method according to claim 11 , further comprising the steps of:

providing a substrate over the second electrode layer, the substrate having a light-transmitting property with respect to light emitted from the layer; and

providing a lens array over and in contact with the substrate.

19. The method according to claim 11 , further comprising the steps of:

forming a sealing layer over the second electrode layer;

providing a substrate over the sealing layer, the substrate having a light-transmitting property with respect to light emitted from the layer; and

providing a lens array over and in contact with the substrate.

20. The method according to claim 19 ,

wherein a refractive index of the substrate is higher than a refractive index of the sealing layer, and

wherein a refractive index of the lens array is higher than the refractive index of the sealing layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 12, 2013
From: YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 029975/0442 →
Priority Claims (1)
JP 2012-060106 · Mar 16, 2012 · national
Continuity (1)
Related Publication 20130240852A1 · Sep 19, 2013