Extraction of systematic defects
In one embodiment, a method for extracting systematic defects is provided. The method includes inspecting a wafer outside a process window to obtain inspection data, defining a defect pattern from the inspection data, filtering defects from design data using a pattern search for the defined defect pattern within the design data, inspecting defects inside the process window with greater sensitivity than outside the process window, and determining systematic defects inside the process window. A computer readable storage medium, and a system for extracting systematic defects are also provided.
1. A method of extracting systematic defects, the method comprising:
inspecting a wafer outside a process window to obtain first inspection data;
inspecting the wafer inside the process window to obtain second inspection data;
determining an intersection of defects from the first and second inspection data;
checking whether the intersection of defects is above or below a threshold count of defects;
when the intersection of defects is not below the threshold count of defects, performing the steps of:
defining a defect pattern from the first inspection data; and
filtering nuisance defects from design data using a pattern search for the defined defect pattern within the design data;
inspecting defects inside the process window with greater sensitivity than outside the process window; and
determining systematic defects inside the process window.
2. The method of claim 1 , wherein inspecting the wafer outside the process window includes inspecting the wafer outside an active area of the wafer.
3. The method of claim 1 , wherein inspecting the wafer outside the process window includes inspecting the wafer inside a dummy area of the wafer.
4. The method of claim 1 , further comprising:
defining an enhanced inspection area on the wafer.
5. The method of claim 1 , further comprising:
importing defects data different than the defined defect pattern from the first inspection data.
6. The method of claim 1 , further comprising:
filtering the systematic defects from the design data.
7. A method of extracting systematic defects, the method comprising:
inspecting a wafer outside and inside a process window to obtain first and second inspection data, respectively, and an intersection of defects;
checking whether the intersection of defects is above or below a threshold count of defects;
when the intersection of defects is not below the threshold count of defects, performing the steps of:
defining a defect pattern from the first inspection data, and
filtering nuisance defects from design data using a pattern search for the defined defect pattern within the design data;
inspecting defects inside the process window with greater sensitivity than outside the process window; and
determining systematic defects inside the process window.
8. A non-transitory computer readable storage medium comprising computer readable instructions which when executed by a computer cause the computer to perform the operations of:
obtaining first inspection data from inspecting a wafer outside a process window;
obtaining second inspection data from inspecting the wafer inside the process window;
determining an intersection of defects from the first and second inspection data;
checking whether the intersection of defects is above or below a threshold count of defects;
when the intersection of defects is not below the threshold count of defects, performing the steps of:
defining a defect pattern from the first inspection data; and
filtering nuisance defects from design data using a pattern search for the defined defect pattern within the design data;
inspecting defects inside the process window with greater sensitivity than outside the process window; and
determining systematic defects inside the process window.
9. The non-transitory computer readable storage medium of claim 8 , wherein inspecting the wafer outside the process window includes inspecting the wafer outside an active area of the wafer.
10. The non-transitory computer readable storage medium of claim 8 , wherein inspecting the wafer outside the process window includes inspecting the wafer inside a dummy area of the wafer.
11. The non-transitory computer readable storage medium of claim 8 , further comprising computer readable instructions which when executed by a computer cause the computer to perform the operation of:
importing defects data different than the defined defect pattern from the first inspection data.
12. A system for extracting systematic defects, the system comprising:
an inspection tool configured to inspect a wafer outside and inside a process window to obtain first and second inspection data, respectively; and
a processor operably coupled to the inspection tool, the processor configured to perform the operations of:
determining an intersection of defects from the first and second inspection data;
checking whether the intersection of defects is above or below a threshold count of defects;
when the intersection of defects is not below the threshold count of defects, performing the steps of:
defining a defect pattern from the first inspection data; and
filtering nuisance defects from design data using a pattern search for the defined defect pattern within the design data;
inspecting defects inside the process window with greater sensitivity than outside the process window; and
determining systematic defects inside the process window.
13. The system of claim 12 , wherein the inspection tool is configured to inspect the wafer outside an active area of the wafer and inside a dummy area of the wafer.
14. The method of claim 1 , further comprising:
defining an inspection area inside the process window using the first inspection data.
15. The non-transitory computer readable storage medium of claim 8 , further comprising computer readable instructions which when executed by a computer cause the computer to perform the operation of defining an inspection area inside the process window using the first inspection data.
16. The system of claim 12 , wherein the processor is further configured to perform the operations of:
defining an inspection area inside the process window using the first inspection data.
17. The method of claim 1 , further comprising:
when the intersection of defects is below the threshold count of defects, performing the step of:
inspecting defects inside the process window with a substantially 100% sampling rate.
18. The method of claim 1 , further comprising:
filtering nuisance defects outside the process window from non-critical areas using the first inspection data.
19. The non-transitory computer readable storage medium of claim 8 , further comprising computer readable instructions which when executed by a computer cause the computer to perform the operation of:
filtering nuisance defects outside the process window from non-critical areas using the first inspection data.
20. The system of claim 12 , wherein the processor is further configured to perform the operations of:
filtering nuisance defects outside the process window from non-critical areas using the first inspection data.