Method for producing resist composition
The present invention provides a method for producing a resist composition used in a process for producing a semiconductor apparatus, the method including the steps of: cleaning an apparatus for producing the resist composition with a cleaning liquid; applying the cleaning liquid on an evaluation substrate by spin-coating after removing the cleaning liquid from the apparatus for producing the resist composition; repeating the step of cleaning and the step of applying until the change in the density of defects having a size of 100 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 0.2/cm 2 or less; and producing the resist composition by using the apparatus for producing the resist composition after the step of repeating. There can be provided a method for producing a resist composition capable of producing a resist composition whose coating defects are reduced.
1. A method for producing a resist underlayer film-forming composition used in a process for producing a semiconductor apparatus, comprising the steps of:
cleaning an apparatus for producing the resist underlayer film-forming composition with a cleaning liquid;
applying the cleaning liquid on an evaluation substrate by spin-coating after removing the cleaning liquid from the apparatus for producing the resist underlayer film-forming composition;
repeating the step of cleaning and the step of applying until the change in the density of defects having a size of 100 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 0.2/cm 2 or less; and
feeding a raw material of the resist underlayer film-forming composition to the apparatus for producing the resist underlayer film-forming composition just after the step of repeating to produce the resist underlayer film-forming composition.
2. The method for producing a resist underlayer film-forming composition according to claim 1 , wherein the apparatus for producing the resist underlayer film-forming composition comprises a production filter.
3. The method for producing a resist underlayer film-forming composition according to claim 1 , wherein the apparatus for producing the resist underlayer film-forming composition is cleaned by the step of repeating until the change in the density of defects having a size of 80 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 1/cm 2 or less.
4. The method for producing a resist underlayer film-forming composition according to claim 2 , wherein the apparatus for producing the resist underlayer film-forming composition is cleaned by the step of repeating until the change in the density of defects having a size of 80 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 1/cm 2 or less.
5. The method for producing a resist underlayer film-forming composition according to claim 1 , wherein the apparatus for producing the resist underlayer film-forming composition is cleaned by the step of repeating until the change in the density of defects having a size of 60 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 2/cm 2 or less.
6. The method for producing a resist underlayer film-forming composition according to claim 2 , wherein the apparatus for producing the resist underlayer film-forming composition is cleaned by the step of repeating until the change in the density of defects having a size of 60 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 2/cm 2 or less.
7. The method for producing a resist underlayer film-forming composition according to claim 3 , wherein the apparatus for producing the resist underlayer film-forming composition is cleaned by the step of repeating until the change in the density of defects having a size of 60 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 2/cm 2 or less.
8. The method for producing a resist underlayer film-forming composition according to claim 4 , wherein the apparatus for producing the resist underlayer film-forming composition is cleaned by the step of repeating until the change in the density of defects having a size of 60 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 2/cm 2 or less.
9. The method for producing a resist underlayer film-forming composition according to claim 1 , wherein the cleaning liquid is an organic solvent.
10. The method for producing a resist underlayer film-forming composition according to claim 2 , wherein the cleaning liquid is an organic solvent.
11. The method for producing a resist underlayer film-forming composition according to claim 3 , wherein the cleaning liquid is an organic solvent.
12. The method for producing a resist underlayer film-forming composition according to claim 5 , wherein the cleaning liquid is an organic solvent.
13. The method for producing a resist underlayer film-forming composition according to claim 1 , wherein the resist underlayer film-forming composition is a silicon-containing composition.
14. The method for producing a resist underlayer film-forming composition according to claim 2 , wherein the resist underlayer film-forming composition is a silicon-containing composition.
15. The method for producing a resist underlayer film-forming composition according to claim 3 , wherein the resist underlayer film-forming composition is a silicon-containing composition.
16. The method for producing a resist underlayer film-forming composition according to claim 5 , wherein the resist underlayer film-forming composition is a silicon-containing composition.
17. The method for producing a resist underlayer film-forming composition according to claim 1 , wherein the evaluation substrate is a silicon wafer.
18. The method for producing a resist underlayer film-forming composition according to claim 2 , wherein the evaluation substrate is a silicon wafer.
19. The method for producing a resist underlayer film-forming composition according to claim 3 , wherein the evaluation substrate is a silicon wafer.
20. The method for producing a resist underlayer film-forming composition according to claim 5 , wherein the evaluation substrate is a silicon wafer.