Ion generation method and ion source

1. An ion generation method using a direct current discharge ion source provided with an arc chamber formed of a high melting point material, comprising:

generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and inducing plasma discharge;

extracting ions generated in the arc chamber from an opening;

causing radicals generated in generating ions to react with a liner in contact with an inner wall of the arc chamber and provided to cover the inner wall of the arc chamber at least partially,

wherein the liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber, and

the arc chamber is provided, in a part of the arc chamber inner wall opposite to the opening, with a first exposed area not covered by the liner, and provided, in a neighborhood of the opening, a second exposed area of the inner wall not covered by the liner,

the liner is provided, in a part of the inner wall formed with the opening, with a lined part covering a neighborhood of the second exposed area, and

the lined part is disposed between a plasma generated in the arc chamber and the inner wall formed with the opening.

2. The ion generation method according to 1 , further comprising exhausting, from the ion source, a compound gas produced by reaction between radicals and the material forming the liner.

3. The ion generation method according to 1 , wherein the liner used in a reaction with ions is formed of a material including silicon or germanium.

4. The ion generation method according to claim 3 , wherein the silicon is monocrystalline silicon.

5. The ion generation method according to claim 4 , wherein the monocrystalline silicon is oriented such that a (100) face is exposed to a plasma generated in the arc chamber.

6. The ion generation method according to claim 3 , wherein the silicon is polycrystalline silicon.

7. The ion generation method according to claim 3 , wherein the silicon is amorphous silicon.

8. The ion generation method according to claim 1 , wherein the source gas is a halide gas or an oxide gas.

9. The ion generation method according to claim 1 ,

wherein the source gas is of at least one type selected from the group consisting of BF 3 , GeF 4 , PF 3 , InCl 3 , InI, InBr, CO 2 , and CO.

10. The ion generation method according to claim 1 ,

wherein the high melting point material includes atoms of at least one of tungsten, molybdenum, tantalum, and carbon.

11. The ion generation method according to claim 1 ,

wherein the temperature in the arc chamber reaches 600° C. or higher while ions are generated.

12. An ion source comprising:

an arc chamber formed of a high melting point material;

a thermoelectronic emission unit configured to emit thermoelectrons in the arc chamber;

a gas introduction port configured to guide a source gas into the arc chamber;

a liner that is in contact with an inner wall of the arc chamber and configured to cover an inner wall of the arc chamber at least partially; and

an opening configured to extract ions generated in the arc chamber,

wherein the liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber, and

the arc chamber is provided, in a part of the arc chamber inner wall opposite to the opening, with a first exposed area not covered by the liner, and provided, in a neighborhood of the opening, a second exposed area of the inner wall not covered by the liner,

the liner is provided, in a part of the inner wall formed with the opening, with a lined part covering a neighborhood of the second exposed area, and

the lined part is disposed between a plasma generated in the arc chamber and the inner wall formed with the opening.

13. The ion source according to claim 12 ,

wherein the arc chamber comprises:

a liner-lined area covered by the liner in the neighborhood of the thermoelectronic emission unit; and

an exposed area not covered by the liner.

14. The ion source according to claim 12 ,

wherein the arc chamber comprises:

a liner-lined area covered by the liner in the neighborhood of a repeller opposite to the thermoelectronic emission unit; and

an exposed area not covered by the liner.