Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device
A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on the second compound semiconductor layer between the first and second electrodes, a first gate electrode on the third compound semiconductor layer, a fourth compound semiconductor layer having a smaller thickness than the third compound semiconductor layer on a portion of the second compound semiconductor layer between the second and third electrodes, and a second gate electrode on the fourth compound semiconductor layer. The first compound semiconductor layer between the second and third electrodes includes a 2-dimensional electron gas (2DEG) and the third compound semiconductor layer includes a 2-dimensional hole gas (2DHG).
1. A semiconductor device comprising:
a first compound semiconductor layer on a substrate;
first through third electrodes on the first compound semiconductor layer, the first through third electrodes spaced apart from each other and the first compound semiconductor layer between the second and third electrodes including a 2-dimensional electron gas (2DEG);
a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, the second compound semiconductor layer having a higher band gap than the first compound semiconductor layer;
a third compound semiconductor layer on the second compound semiconductor layer between the first and second electrodes, the third compound semiconductor layer including a 2-dimensional hole gas (2DHG);
a first gate electrode on the third compound semiconductor layer;
a fourth compound semiconductor layer on a part of the second compound semiconductor layer between the second and third electrodes, the fourth compound semiconductor layer having a smaller thickness than the third compound semiconductor layer; and
a second gate electrode on the fourth compound semiconductor layer, the second gate electrode connected to the first gate electrode through a first wire,
wherein all of the first through third electrodes are in direct contact with the first compound semiconductor layer, and
wherein the first compound semiconductor layer includes the 2DEG only between the second and third electrodes.
2. The semiconductor device of claim 1 , further comprising:
a second wire connecting the first and third electrodes.
3. The semiconductor device of claim 1 , wherein band gaps of the third and fourth compound semiconductor layers are smaller than the band gap of the second compound semiconductor layer.
4. The semiconductor device of claim 3 , wherein the third and fourth compound semiconductor layers are formed of one of same and different compound semiconductors.
5. The semiconductor device of claim 3 , wherein the third and fourth compound semiconductor layers include p-gallium nitride (GaN) layers.
6. The semiconductor device of claim 1 , wherein the first compound semiconductor layer includes a Group III-V compound semiconductor layer.