Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same
Graphene transferring members, graphene transferrer, methods of transferring graphene, and methods of fabricating a graphene device, may include a metal thin-film layer pattern and a graphene layer sequentially stacked on an adhesive member. The metal thin-film layer and the graphene layer may have the same shape. After transferring the graphene layer onto a transfer-target substrate during the fabrication of a graphene device, the metal thin-film layer is patterned to form electrodes on respective ends of the graphene layer by removing a portion of the metal thin-film layer.
1. A method of transferring graphene, the method comprising:
sequentially forming a sacrificial layer and a catalyst layer on a substrate;
growing a graphene layer on the catalyst layer;
forming a metal thin-film layer on the graphene layer;
patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern;
forming an adhesive layer on the metal thin-film layer;
sequentially removing the sacrificial layer and the catalyst layer pattern; and
transferring the graphene layer pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer-target substrate.
2. The method of claim 1 , wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
3. The method of claim 1 , wherein the graphene layer is a single layer graphene or a bi-layer graphene.
4. The method of claim 1 , wherein the metal thin-film layer and the graphene layer are patterned into a same shape.
5. The method of claim 1 , wherein the catalyst layer is formed of a metal selected from nickel (Ni), iron (Fe), cobalt (Co), copper (Cu), platinum (Pt), ruthenium (Ru) and a combination thereof.
6. The method of claim 1 , wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
7. The method of claim 1 , wherein the removing the catalyst layer pattern includes using a galvanic corrosion effect.
8. A method of fabricating a graphene device, the method comprising:
sequentially forming a sacrificial layer and a catalyst layer on a substrate;
growing a graphene layer on the catalyst layer;
forming a metal thin-film layer on the graphene layer;
patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern;
forming an adhesive layer on the metal thin-film layer pattern;
sequentially removing the sacrificial layer and the catalyst layer pattern;
transferring the graphene layer pattern and the metal thin-film pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer-target substrate;
removing the adhesive layer; and
patterning the metal thin-film layer pattern to form electrodes at respective ends of the graphene layer pattern, a portion of the graphene layer pattern between the electrodes being exposed.
9. The method of claim 8 , wherein the adhesive layer is one selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape, and a photoresist.
10. The method of claim 8 , wherein the graphene layer is a single layer graphene or a bi-layer graphene.
11. The method of claim 8 , wherein the metal thin-film layer pattern and the graphene layer pattern have a same shape.
12. The method of claim 8 , wherein the catalyst layer is formed of a metal selected from Ni, Fe, Co, Cu, Pt, Ru and a combination thereof.
13. The method of claim 8 , wherein the metal thin-film layer is formed of a metal selected from Au, Cu, Ni, Ti, Fe, Ru, Pd and a combination thereof.
14. The method of claim 8 , wherein the removing the catalyst layer includes using a galvanic corrosion effect.
15. The method of claim 8 , wherein the portion of the graphene layer pattern exposed between the electrodes is a sensor unit of a graphene sensor.
16. The method of claim 8 , wherein the portion of the graphene layer pattern exposed between the electrodes is a channel of a graphene transistor.