Integrating through substrate vias from wafer backside layers of integrated circuits
A semiconductor wafer has an integrated through substrate via created from a backside of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate and a shallow trench isolation (STI) layer pad on a surface of the semiconductor substrate. The semiconductor wafer also includes an inter-layer dielectric (ILD) layer formed on a contact etch stop layer, separating the ILD layer from the STI layer pad on the surface of the semiconductor substrate. The semiconductor wafer further includes a through substrate via that extends through the STI layer pad and the semiconductor substrate to couple with at least one contact within the ILD layer. The through substrate via includes a conductive filler material and a sidewall isolation liner layer. The sidewall isolation liner layer has a portion that possibly extends into, but not through, the STI layer pad.
1. A semiconductor device comprising:
a semiconductor substrate;
a shallow trench isolation (STI) layer pad over a surface of the semiconductor substrate;
an inter-layer dielectric (ILD) layer on a contact etch stop layer, the contact etch stop layer separating the ILD layer from the STI layer pad; and
a through substrate via extending through the semiconductor substrate and partially into, but not through, the STI layer pad, and the through substrate via comprising a conductive filler material and a sidewall isolation liner layer, the sidewall isolation liner layer having a portion that extends into, but not through, the STI layer pad.
2. The semiconductor device of claim 1 , in which a chemical material composition of the sidewall isolation liner layer is different from a chemical material composition of the at least one contact within the ILD layer or a chemical composition of the STI layer pad.
3. The semiconductor device of claim 1 , in which the sidewall isolation liner layer is comprised of a material selected from a group consisting of a polymer, silicon nitride, and silicon oxide.
4. The semiconductor device of claim 1 , further comprising a redistribution layer coupled to the conductive filler material of the through substrate via.
5. The semiconductor device of claim 1 , incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, or a computer.
6. A semiconductor device comprising:
a semiconductor substrate;
a shallow trench isolation (STI) layer pad over a surface of the semiconductor substrate;
an inter-layer dielectric (ILD) layer on a contact etch stop layer, the contact etch stop layer separating the ILD layer from the STI layer pad; and
means for conducting through a substrate, the conducting means extending through the semiconductor substrate and partially into, but not through, the STI layer pad, the conducting means comprising a means for isolating sidewalls of the conducting means, the isolating means having a portion that extends into, but not through, the STI layer pad.
7. The semiconductor device of claim 6 , in which a chemical material composition of the isolating means is different from a chemical material composition of the contact within the ILD layer or a chemical composition of the STI layer pad.
8. The semiconductor device of claim 6 , in which the isolating means comprises a material selected from a group consisting of a polymer, silicon nitride, and silicon oxide.
9. The semiconductor device of claim 6 , further comprising a redistribution layer coupled to the means for conducting.
10. The semiconductor device of claim 6 , incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, or a computer.