Surface treated aluminum nitride baffle
Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.
1. A baffle for use in a semiconductor process chamber, comprising:
a body comprising aluminum nitride and a metal oxide binding agent, a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem, wherein a ratio of aluminum nitride to the metal oxide binding agent on a surface of the body is greater than or equal to the ratio within the body;
a gas inlet disposed in an upper portion of the center stem; and
a plurality of gas outlets disposed in a lower portion of the center stem and fluidly coupled to the gas inlet.
2. The baffle of claim 1 , further comprising:
a plurality of holes disposed through the outer annulus to facilitate the flow of a process gas from a backside of the baffle to a front side of the baffle.
3. The baffle of claim 1 , wherein the metal oxide binding agent comprises at least one of yttrium oxide or erbium oxide.
4. The baffle of claim 1 , wherein the surface of the body is visually free of the metal oxide binding agent at 100× magnification.
5. The baffle of claim 1 , wherein the ratio of aluminum nitride to the metal oxide binding agent on a surface of the body is greater than the ratio within the body.
6. An apparatus for processing a semiconductor substrate, comprising:
a process chamber having an inner volume and a first gas inlet disposed in a ceiling thereof; and
a baffle coupled to the first gas inlet and configured to direct the flow of a first process gas from the first gas inlet to the inner volume, the baffle comprising:
a body comprising aluminum nitride and a metal oxide binding agent, center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem, wherein a ratio of aluminum nitride to the metal oxide binding agent on a surface of the body is greater than or equal to the ratio within the body;
a second gas inlet disposed in an upper portion of the center stem; and
a plurality of gas outlets disposed in a lower portion of the center stem and fluidly coupled to the second gas inlet.
7. The apparatus of claim 6 , further comprising:
a third gas inlet disposed in a ceiling of the process chamber proximate the first gas inlet for supplying a second process gas to the inner volume, wherein the third gas inlet is configured to provide the second process gas to a backside of the baffle, and wherein the outer annulus directs the flow of the second process gas from the backside to the frontside of the baffle.
8. The apparatus of claim 7 , wherein the baffle further comprises:
a plurality of holes disposed through the outer annulus, wherein the plurality of holes facilitate the flow of the second process gas from a backside of the baffle to a frontside of the baffle.
9. The apparatus of claim 6 , wherein the surface of the body is visually free of the metal oxide binding agent at 100× magnification.
10. The apparatus of claim 6 , wherein the ratio of aluminum nitride to the metal oxide binding agent on a surface of the body is greater than the ratio within the body.