Method for correcting electronic proximity effects using off-center scattering functions
View Patent ↗A method for projecting an electron beam, used notably in direct or indirect writing lithography and in electronic microscopy. Proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. For this, the convolution of a point spread function with the geometry of the target is conventionally used. At least one of the components of the point spread function has its maximum value not located on the center of the beam. Preferably, the maximum value is instead located on the backward scattering peak. Advantageously, the point spread function uses gamma distribution laws.
1. A method for projecting an electron beam onto a target comprising:
a step of correcting effects of forward and backward scattering of said beam comprising a substep of calculating a point spread function, wherein said point spread function comprises at least one function, a maximum amplitude value of which is not located on a center of the beam; and
modulating dosage of the electron beam based upon at least the point spread function.
2. The projection method of claim 1 , wherein said at least one function, the maximum amplitude value of which is not located on the center of the beam has a respective maximum amplitude value located on a backward scattering peak of the electron beam.
3. The projection method of claim 1 , wherein said at least one function the maximum value of which is not located on the center of the beam is a gamma distribution function.
4. The projection method of claim 1 , wherein said point spread function further comprises a function a maximum value of which is located on the center of the beam in order to model the forward scattering.
5. The projection method of claim 1 , wherein said point spread function comprises at least as many functions respective maximum amplitude values of which are not located on the center of the beam as there are backward scattering peaks, with at least one function a maximum amplitude value of which is respectively located on each backward scattering peak.
6. The projection method of claim 1 , wherein said point spread function is a linear combination of at least one Gaussian and of at least one gamma function.
7. A non-transitory computer-readable media comprising program code that is configured to be executable by a computer to provide a module for simulating or correcting effects of forward and backward scattering of an electron beam, said module comprising a submodule for calculating a point spread function, wherein said point spread function comprises at least one function, a maximum amplitude value of which is not located on a center of the electron beam, the point spread function being used for modulation of a dosage of the electron beam.
8. The computer program of claim 7 , wherein said point spread function comprises at least one function the maximum amplitude value of which is located on a backward scattering peak of the electron beam.
9. The computer program claim 7 , wherein said point spread function comprises at least one Gaussian and at least one gamma function.
10. An electronic lithography system comprising a module for projecting an electron beam onto a target and a computer program according to claim 7 .
11. A system for simulating at least one electronic lithography step comprising a module for simulating a step of projecting an electron beam onto a target and a computer program according to claim 7 .
12. An electronic microscopy system comprising a module for projecting an electron beam onto a target and a computer according to claim 7 .