Semiconductor structure and method for manufacturing the same
A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug.
1. A semiconductor structure, comprising:
a substrate having a first conductive type;
a deep well having a second conductive type, formed in the substrate and extending down from a surface of the substrate;
a first well having the first conductive type, extending down from the surface of the substrate and formed in the deep well;
a second well having the second conductive type, extending down from the surface of the substrate and formed in the deep well, and the second well spaced apart from the first well;
a gate electrode, formed on a gate oxide on the substrate and disposed between the first and second wells;
an isolation, connected to the gate oxide and extending down from the surface of the substrate and disposed between the gate electrode and the second well;
a conductive plug penetrating into the isolation and reaching a bottom surface of the isolation, wherein the isolation is thicker than the gate oxide;
a first doping electrode region having the second conductive type, formed below the isolation and within the second well to connect the conductive plug;
a second doping electrode region having the second conductive type, extending down from the surface of the substrate and formed within the first well, wherein the gate electrode is disposed between the isolation and the second doping electrode region; and
another conductive plug correspondingly and electrically connected to the second doping electrode region, wherein a bottom surface of said another conductive plug entirely and only contacts the second doping electrode region with the second conductive type.
2. The semiconductor structure according to claim 1 , wherein the first doping electrode region contacts a bottom surface of the conductive plug as a drain region.
3. The semiconductor structure according to claim 1 , further comprising a silicide formed at a bottom surface of the conductive plug, wherein the silicide is formed between the conductive plug and the first doping electrode region.
4. The semiconductor structure according to claim 1 , wherein a bottom surface of the conductive plug is aligned with the bottom surface of the isolation.
5. The semiconductor structure according to claim 1 , wherein the gate electrode partially overlies the isolation.
6. The semiconductor structure according to claim 1 , further comprising a field region formed within the deep well and enclosing the second well, and the field region having the second conductive type, wherein doping concentrations of the second well, the field region and the deep well are in an order from heavy to light.
7. The semiconductor structure according to claim 1 , further comprising a bulk region formed within the first well and adjacent to the second doping electrode region, the bulk region having the first conductive type and extending down from the surface of the substrate.
8. The semiconductor structure according to claim 1 , wherein the isolation is a single layer or a combination of multi-layers.
9. The semiconductor structure according to claim 8 , wherein the isolation comprises multi-layers selected from SiO 2 , SiON, Si 3 N 4 , and materials with high dielectric constant.
10. The semiconductor structure according to claim 9 , wherein said materials with high dielectric constant are selected from rare-earth (RE) oxides and lanthanide series metal oxides.
11. A method of manufacturing a semiconductor structure, comprising:
providing a substrate having a first conductive type;
forming a deep well having a second conductive type in the substrate and extending down from a surface of the substrate;
forming a first well having the first conductive type in the deep well and extending down from the surface of the substrate;
forming a second well having the second conductive type in the deep well and extending down from the surface of the substrate, and the second well being spaced apart from the first well;
forming an isolation connected to a gate oxide on the substrate and extending down from the surface of the substrate and part of the isolation disposed in the second well, wherein the isolation is thicker than the gate oxide;
forming a gate electrode on the gate oxide and disposed between the first and second wells;
forming a contact hole penetrating into the isolation and reaching a bottom surface of the isolation;
forming a first doping electrode region within the second well and below the contact hole, the first doping electrode region having the second conductive type;
forming a conductive plug in the contact hole to reach the bottom surface of the isolation, wherein the conductive plug connects the first doping electrode region;
forming a second doping electrode region having the second conductive type, extending down from the surface of the substrate and formed within the first well, wherein the gate electrode is disposed between the isolation and the second doping electrode region; and
forming another conductive plug correspondingly and electrically connected to the second doping electrode region, wherein a bottom surface of said another conductive plug entirely and only contacts the second doping electrode region with the second conductive type.
12. The method according to claim 11 , wherein the first doping electrode region contacts a bottom surface of the conductive plug as a drain region.
13. The method according to claim 11 , further comprising:
forming a silicide at a bottom surface of the conductive plug, wherein the silicide is formed between the conductive plug and the first doping electrode region.
14. The method according to claim 11 , wherein a bottom surface of the conductive plug is aligned with the bottom surface of the isolation.
15. The method according to claim 11 , wherein the gate electrode partially overlies the isolation.
16. The method according to claim 11 , further comprising forming a field region within the deep well and enclosing the second well, and the field region having the second conductive type, wherein doping concentrations of the second well, the field region and the deep well are in an order from heavy to light.
17. The semiconductor structure according to claim 1 , wherein the first doping electrode region is entirely positioned outside the isolation.
18. The semiconductor structure according to claim 1 , wherein the isolation is divided into two portions by the conductive plug, and each portion of the isolation is thicker than the gate oxide.