IP Library Granted Patent US 9,229,059
Granted Patent B2
US 9,229,059 · App. 14/099,318 · Granted Jan 5, 2016

Memory test system and method

Inventor: Min-Chung Chou (Hsinchu, TW)
Assignee: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
G01R31/31912G11C29/00G11C29/10G11C29/1201G11C29/26G11C29/36G11C29/40G11C29/48G11C2029/5602
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Quick Facts
Patent No.
US 9,229,059
App. No.
14/099,318
Granted
Jan 5, 2016
Kind
B2
Abstract

An exemplary embodiment of the present disclosure illustrates a memory test system comprising a memory device, a probe card, and a tester. The memory device comprises a memory die with a plurality of memory banks, a plurality of input circuits, and a plurality of output circuits, wherein each of the input circuits has a first input pin and a second pin, the first input pins of the input circuits are used to read a plurality of patches of data stored in memory cells of the memory banks, and the second input pins are used to receive a compressed result. The output circuits receive compressed signals output from the input circuits, and the probe card mixes the compressed output signals output from the output circuits to output a mixed compressed output signal to the tester.

Claims (9)

1. A memory test system, comprising:

a memory device, comprising a memory die with a plurality of memory banks, a plurality of input circuits, and a plurality of output circuits, wherein each of the input circuits has a first input pin and a second pin, the first input pins of the input circuits are used to read a plurality of patches of data stored in memory cells of the memory banks, and the second input pins are used to receive a compressed result;

a probe card, electrically connected to the output circuits; and

a tester, electrically connected to the probe card;

wherein the output circuits receive compressed signals output from the input circuits, and the probe card mixes compressed output signals output from the output circuits to output a mixed compressed output signal to the tester.

2. The memory test system according to claim 1 , wherein the input circuits are buffers.

3. The memory test system according to claim 1 , wherein the first input pins are input/output pins.

4. The memory test system according to claim 1 , wherein the output circuits are off-chip drivers.

5. The memory test system according to claim 1 , wherein the memory device is a dynamic random access memory.

Assignments (2)
CHANGE OF NAME Recorded Jun 25, 2025
From: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
To: ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC.
Reel/Frame 071703/0241 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2013
From: CHOU, MIN-CHUNG
To: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
Reel/Frame 031734/0083 →
Continuity (1)
Related Publication 20150162096A1 · Jun 11, 2015