IP Library Granted Patent US 9,230,742
Granted Patent B2
US 9,230,742 · App. 14/742,241 · Granted Jan 5, 2016

Capacitor

Inventor: Hidetoshi Masuda (Tokyo, JP)
Assignee: Taiyo Yuden Co., Ltd.
H01G4/30H01G4/10H01G4/224H01G4/236
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Quick Facts
Patent No.
US 9,230,742
App. No.
14/742,241
Granted
Jan 5, 2016
Kind
B2
Abstract

A capacitor includes a dielectric layer having a first plane, a second plane opposite to the first plane, and first and second through-holes communicated with the first plane and the second plane; a first external conductor layer disposed on the first plane; a second external conductor layer disposed on the second plane; a first internal electrode formed in the first through-hole, connected to the first external electrode layer, disposed in the second hole diameter part at a tip and separated from the second external electrode layer; and a second internal electrode formed in the second through-hole, connected to the second external electrode layer, and separated from the first external electrode layer.

Claims (13)

1. A capacitor, comprising:

a dielectric layer having a first plane, and a second plane opposite to the first plane;

a first through-hole communicated with the first plane and the second plane, having difference in level on an inside wall;

a second through-hole communicated with the first plane and the second plane;

a first external conductor layer disposed on the first plane;

a second external conductor layer disposed on the second plane;

a first internal electrode formed in the first through-hole, connected to the first external electrode layer, and separated from the second external electrode layer; and

a second internal electrode formed in the second through-hole, connected to the second external electrode layer, and separated from the first external electrode layer.

2. The capacitor according to claim 1 , wherein the second through-hole having a difference in level on the inside wall.

3. The capacitor according to claim 2 , wherein the first through-hole having a two-staged difference in level on the inside wall, and

the second through-hole having a two-staged difference in level on the inside wall.

4. The capacitor according to claim 1 , wherein the dielectric layer is made of a material that provides the through-hole by anodic oxidation.

5. The capacitor according to claim 4 , wherein the dielectric layer is made of aluminum oxide.

Priority Claims (1)
JP 2012-191162 · Aug 31, 2012 · national
Continuity (2)
Division 14013341 · Aug 29, 2013
Related Publication 20150287534A1 · Oct 8, 2015