Optoelectronic platform with carbon based conductor and quantum dots and transistor comprising such a platform
The invention comprises an optoelectronic platform with a carbon-based conduction layer and a layer of colloidal quantum dots on top as light absorbing material. Photoconductive gain on the order of 10 6 is possible, while maintaining de operating voltage low. The platform can be used as a transistor.
1. An optoelectronic platform comprising a carbon-based conduction layer ( 2 ) on top of a substrate and a layer of colloidal quantum dots for absorbing light ( 1 ) on top of the carbon-based conduction layer ( 2 ), wherein the carbon-based conduction layer is a distinct layer which comprises graphene, reduced graphene oxide or carbon nanotubes.
2. The optoelectronic platform according to claim 1 further comprising a substrate ( 4 ) and a dielectric interlayer ( 3 ) between the substrate and the carbon-based layer.
3. The optoelectronic platform according to claim 2 wherein the substrate comprises Si, Boron Nitride or GaAs and the dielectric interlayer comprises SiO 2 LiF, Alumina on or Hafnium oxide.
4. The optoelectronic platform according to claim 1 wherein the quantum dots comprise of one or more of the following materials: CdSe, CdS, PbSe, ZnO, ZnS, CZTS, Cu 2 S, Bi 2 S 3 , Ag 2 S, HgTe, CdHgTe, InAs, or InSb.
5. The optoelectronic platform according to claim 1 wherein the carbon-based conduction layer is shaped in the form of a rectangle, nanoconstriction, hall-bar or ribbon.
6. An The optoelectronic platform of claim 1 comprising a carbon-based conduction layer ( 2 ) and a layer of colloidal quantum dots for absorbing light ( 1 ) on top of the carbon-based layer ( 2 ), wherein the carbon-based layer comprises graphene, reduced graphene oxide or carbon nanotubes and the an absorbing layer consists of a conjugated dye or polymer.
7. A transistor comprising a source and a drain electrode (Vs, Vd) and an optoelectronic platform comprising a carbon-based conduction layer ( 2 ) on top of a substrate and in contact with the source electrode and with the drain electrode and a layer of colloidal quantum dots for absorbing light ( 1 ) on top of the carbon-based conduction layer ( 2 ), wherein the carbon-based conduction layer is a distinct layer which comprises graphene, reduced graphene oxide or carbon nanotubes.
8. The transistor according to claim 7 further comprising a top electrode in contact with the layer of colloidal quantum dots layer and not in contact with the carbon-based conduction layer.