Optical semiconductor apparatus
An optical semiconductor device includes a silicon oxide layer configured to be formed on a substrate; an optical waveguide part configured to be formed on the silicon oxide layer; a cladding layer configured to be formed covering the optical waveguide part; and a semiconductor laser configured to be disposed on the substrate. Laser light emitted from the semiconductor laser enters the optical waveguide part. The optical waveguide part increases transmittance of light when the wavelength becomes greater within an oscillation wavelength range of the semiconductor laser.
1. An optical semiconductor device comprising:
a silicon oxide layer configured to be formed on a substrate;
an optical waveguide part configured to be formed on the silicon oxide layer;
a cladding layer configured to be formed covering the optical waveguide part; and
a semiconductor laser configured to be disposed on the substrate;
wherein laser light emitted from the semiconductor laser enters the optical waveguide part,
wherein the optical waveguide part increases transmittance of light when the wavelength becomes greater within an oscillation wavelength range of the semiconductor laser.
2. The optical semiconductor device as claimed in claim 1 :
wherein the oscillation wavelength range of the semiconductor laser is a range of oscillation wavelength changing depending on a change of the environmental temperature,
wherein the optical waveguide part has higher transmittance of light emitted from the semiconductor laser when the environmental temperature takes a high-temperature than when the environmental temperature takes a low-temperature.
3. The optical semiconductor device as claimed in claim 1 :
wherein the optical waveguide part includes a directional coupler formed with a part of a first optical waveguide and a part of a second optical waveguide,
wherein laser light emitted from the semiconductor laser enters the first optical waveguide, propagates from the first optical waveguide to the second optical waveguide at the directional coupler, and is emitted from a terminal part of the second optical waveguide.
4. The optical semiconductor device as claimed in claim 1 :
wherein the optical waveguide part includes a optical waveguide and a Bragg diffraction grating formed at the optical waveguide,
wherein laser light emitted from the semiconductor laser enters one edge surface of the optical waveguide part, passes the Bragg diffraction grating, and is emitted from another edge surface of the optical waveguide part.
5. The optical semiconductor device as claimed in claim 1 :
wherein the semiconductor laser is a quantum dot laser.
6. The optical semiconductor device as claimed in claim 1 :
wherein the semiconductor laser is a quantum well laser.
7. The optical semiconductor device as claimed in claim 1 :
wherein the optical waveguide part is formed with a material including silicon.
8. The optical semiconductor device as claimed in claim 1 :
wherein the cladding layer is formed with a material including silicon oxide.
9. The optical semiconductor device as claimed in claim 1 :
wherein the substrate is formed with a material including silicon.
10. An optical transmitter comprising:
the optical semiconductor device as claimed in claim 1 ; and
an optical modulator configured to be optically connected with the optical semiconductor device,
wherein the optical modulator is formed on the substrate in the optical semiconductor device.
11. An optical transceiver comprising:
the optical transmitter as claimed in claim 10 ; and
an optical receiver configured to receive light emitted from the optical transmitter,
wherein the optical receiver is formed on the substrate in the optical semiconductor device.
12. The optical semiconductor device as claimed in claim 1 :
wherein the optical waveguide part has a higher transmittance of light within a range of wavelength longer than a wavelength obtained by oscillating the semiconductor laser at room temperature.