Light emitting device and luminaire
According to one embodiment, there is provided a light-emitting device including a light-emitting section, a thermal radiation member, and a heat conduction layer. The light-emitting section includes a mounting substrate section and a light-emitting element section. The mounting substrate section includes a substrate, a first metal layer, and a second metal layer. The substrate includes a first principal plane including a mounting region and a second principal plane. The first metal layer includes mounting patterns provided in the mounting region. The light-emitting element section includes semiconductor light-emitting elements and a wavelength conversion layer. The semiconductor light-emitting elements are connected to the mounting patterns. The luminous existence of the light-emitting element section is equal to or higher than 10 lm/mm 2 and equal to or lower than 100 lm/mm 2 . The thermal radiation member has an area equal to or larger than five times the area of the mounting region.
1. A light-emitting device comprising:
a light-emitting section including:
a mounting substrate section including:
an insulative substrate including a first principal plane and a second principal plane on an opposite side of the first principal plane, the first principal plane including a mounting region and a peripheral region provided around the mounting region;
a first metal layer provided on the first principal plane and including a plurality of mounting patterns provided in the mounting region; and
a second metal layer provided on the second principal plane and electrically insulated from the first metal layer, at least a part of the second metal layer overlapping the mounting region when projected on a first plane parallel to the first principal plane;
a light-emitting element section including:
a plurality of semiconductor light-emitting elements provided on the mounting region, each of the plurality of semiconductor light-emitting elements being electrically connected to any one mounting pattern among the plurality of mounting patterns and another one mounting pattern adjacent to the mounting pattern among the plurality of mounting patterns; and
a wavelength conversion layer provided on the mounting region and on at least parts of the plurality of semiconductor light-emitting elements, the wavelength conversion layer being not provided on the peripheral region, the wavelength conversion layer absorbing at least a part of first light emitted from the plurality of semiconductor light-emitting elements, and emitting second light having a wavelength different from a wavelength of the first light,
a ratio of a luminous flux of light emitted from the light-emitting element section to a light emission area of the mounting region being equal to or higher than 10 lm/mm 2 and equal to or lower than 100 lm/mm 2 ;
a thermal radiation member opposed to the second principal plane and having an area equal to or larger than five times an area of the mounting region when projected on the first plane; and
a heat conduction layer provided between the thermal radiation member and the second metal layer.
2. The device according to claim 1 , wherein
an area of the peripheral region is equal to or larger than four times the area of the mounting region.
3. The device according to claim 1 , wherein a distance between an end of the first principal plane and the mounting region extending along a direction parallel to the first principal plane and passing a center of the mounting region is equal to or larger than ½ of width of the mounting region extending along the direction passing the center.
4. The device according to claim 1 , wherein:
the first metal layer further includes:
an electrode section for first connector connected to one of the plurality of mounting patterns; and
an electrode section for second connector connected to another one of the plurality of mounting patterns different from the one mounting pattern,
the light-emitting section further includes:
a first connector provided on the first principal plane and electrically connected to the electrode section for first connector; and
a second connector provided on the first principal plane and electrically connected to the electrode section for second connector, and
the light-emitting element section is arranged between the first connector and the second connector.
5. The device according to claim 1 , wherein:
the wavelength conversion layer includes:
a plurality of wavelength conversion particles configured to absorb at least a part of the first light and emit the second light; and
light transmissive resin in which the plurality of wavelength conversion particles are dispersed, and
Shore A of the light transmissive resin is equal to or higher than 15 and equal to or lower than 50.
6. The device according to claim 1 , wherein:
each of the plurality of semiconductor light-emitting elements includes:
a first semiconductor layer of a first conduction type including a first semiconductor portion and a second semiconductor portion arranged side by side with the first semiconductor portion in a direction crossing a superimposing direction extending from the thermal radiation member to the light-emitting section;
a second semiconductor layer of a second conduction type provided between the second semiconductor portion and the mounting substrate section; and
a light-emitting layer provided between the second semiconductor portion and the second semiconductor layer, and
the light-emitting element section further includes:
a first joining metal member provided between the first semiconductor portion and any one of the mounting patterns; and
a second joining metal member provided between the second semiconductor layer and another one of the mounting patterns.
7. The device according to claim 1 , wherein an area of the second metal layer projected on the first plane is larger than 80% of the area of the mounting region.
8. The device according to claim 1 , wherein an area of the second metal layer projected on the first plane is equal to or larger than 95% of an area of the second principal plane.
9. The device according to claim 1 , wherein:
a plurality of the light-emitting sections are provided, and
the heat conduction layer is arranged between the plurality of the light-emitting sections and the thermal radiation member.
10. The device according to claim 1 , further comprising a light reflective and insulative light reflecting resin layer, wherein:
a plurality of the light-emitting sections are provided,
a substrate of one light-emitting section among the plurality of light-emitting sections includes a first side surface crossing the first principal plane,
a substrate of another light-emitting section arranged side by side with the one light-emitting section among the plurality of light-emitting sections in a surface parallel to the first principal plane includes a second side surface crossing the first principal plane and opposed to the first side surface, and
the light reflecting resin layer covers at least a part of the first side surface and covers at least a part of the second side surface.
11. The device according to claim 10 , wherein a thickness of the thermal radiation member is equal to or larger than 0.06 times and equal to or smaller than 0.12 times a length, in a direction parallel to the first principal plane, of a region of the thermal radiation member where the mounting substrate section is provided.
12. The device according to claim 1 , wherein a first surface of the thermal radiation member opposed to the second principal plane has irregularities.
13. The device according to claim 12 , wherein a concave portion of the irregularities of the first surface includes a thermal radiation member bottom surface portion, a thermal radiation member side surface portion crossing the second principal plane, and a curved surface-shaped thermal radiation member corner portion that connects the thermal radiation member bottom surface portion and the thermal radiation member side surface portion.
14. The device according to claim 1 , wherein a distance in a direction perpendicular to the first principal plane between an upper surface of any one of the plurality of semiconductor light-emitting elements and an upper surface of the wavelength conversion layer is equal to or larger than 100 micrometers and equal to or smaller than 300 micrometers.
15. The device according to claim 1 , wherein:
a center of the mounting region is provided to substantially coincide with a center of the substrate,
an area of the second metal layer projected on the first plane is equal to or larger than 95% of an area of the second principal plane, and
the heat conduction layer includes a solder.
16. The device according to claim 1 , wherein:
each of the mounting patterns includes:
a first mounting portion having a first width along a traverse direction,
a second mounting portion having a second width along a traverse direction, and
a third mounting portion provided between the first mounting portion and the second mounting portion, the third mounting portion connecting the first mounting portion and the second mounting portion, the third mounting portion having a third width along a traverse direction, the third width being smaller than the second width and smaller than the second width,
the traverse direction is perpendicular to a direction extending from the first mounting portion to the second mounting portion,
a width of one of the semiconductor light-emitting elements is wider than the first width and wider than the second width, and
the one of the semiconductor light-emitting elements covers one of the first mounting portion of one of the mounting patterns and covers one of the second mounting portion of another one of the mounting patterns.