Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory

1. A memory device comprising:

an electrode comprising a plate of electrode material, the plate having a proximal end and distal end having a contact surface with a contact area, so that the contact area of the contact surface is determined by thickness of the plate at the contact surface and width of the plate at the contact surface,

wherein the plate has a shape including a first segment and a second segment, the second segment having a first width, the first segment having a second width at the proximal end and extending toward the distal end to an intermediate position between the proximal and distal ends, and the second segment extending from the first segment to the distal end in which the second width narrows to the first width at the contact surface,

the electrode comprising another plate of the electrode material directly connected to the proximal end of the plate of the electrode material,

wherein the proximal end of the plate of the electrode material has a first set of dimensions characterized by the thickness and the second width, and the another plate of the electrode material has a second set of dimensions characterized by a third width at least as wide as the second width and another thickness larger than the thickness of the proximal end of the plate of the electrode material,

wherein the first width, the second width, and the third width are measured in a same first direction,

wherein the thickness and the another thickness are measured in a same second direction; and

a stack including a layer of memory material in contact with the contact surface, and a layer of top electrode material in contact with the layer of memory material, the stack having a primary body and a protrusion having a width less than that of the primary body, the stack having a length along a bit line direction, the bit line direction being orthogonal to the width, the bit line direction being orthogonal to a word line direction, memory material in the protrusion contacting contact surface on the distal end of plate, wherein the width of the primary body of the stack, the first width, and the second width are along a same direction.

2. The device of claim 1 , wherein the stack comprises or is in contact with a bit line.

3. The device of claim 1 , wherein the protrusion is self-aligned with the contact surface of the corresponding plate.

4. The device of claim 1 , wherein the protrusion extends through a form through insulating material, the form being aligned with the contact surface of the plate.

5. The device of claim 1 , including an access device in electrical communication with the proximal end of the plate.

6. A memory device comprising:

an array of electrodes including rows and columns, at least some of the electrodes in the array comprising plates of electrode material, the plates having respective proximal ends and distal ends having contact surfaces with respective contact areas, so that the contact areas of the contact surfaces are determined by thicknesses of the plates at the contact surfaces and widths of the plates at the contact surfaces,

wherein an electrode in the array of electrodes includes one of the plates, wherein said one of the plates has a shape including a first segment and a second segment, the second segment having a first width, the first segment having a second width at the proximal end and extending toward the distal end to an intermediate position between the proximal and distal ends, and the second segment extending from the first segment to the distal end in which the second width narrows to the first width at the contact surface,

the electrode comprising another plate of the electrode material directly connected to the proximal end of the plate of the electrode material,

wherein the proximal end of the plate of the electrode material has a first set of dimensions characterized by the thickness and the second width, and the another plate of the electrode material has a second set of dimensions characterized by a third width at least as wide as the second width and another thickness larger than the thickness of the proximal end of the plate of the electrode material,

wherein the first width, the second width, and the third width are measured in a same first direction,

wherein the thickness and the another thickness are measured in a same second direction; and

a plurality of multilayer strips arranged over respective columns in the array of electrodes, a multilayer strip in the plurality of multilayer strips including a layer of memory material and a layer of top electrode material, and having a primary body and a protrusion having a width less than that of the primary body, the stack having a length along a bit line direction, the bit line direction being orthogonal to the width, the bit line direction being orthogonal to a word line direction, memory material in the protrusion contacting contact surfaces on the distal ends of plates of electrodes in the corresponding column in the array, wherein the width of the primary body of the stack, the first width, and the second width are along a same direction.

7. The device of claim 6 , wherein the multilayer strips in the plurality of multilayer strips are arranged as bit lines.

8. The device of claim 6 , wherein the protrusion is self-aligned with the contact surfaces of the corresponding thin film plates in the column.

9. The device of claim 6 , wherein the protrusion extends through a corresponding form through insulating material, the corresponding form being aligned with the contact surfaces of the plates in the column.

10. The device of claim 6 , including an array of access devices in electrical communication with the proximal ends of the plurality of plates.

11. The device of claim 6 , wherein the plurality of plates comprise respective thin film plates.