Switchable on-die memory error correcting engine

1. A method of operating a memory device comprising a memory array on a memory die, comprising:

providing the memory die, the memory die comprising:

a memory array; and

an on-die error correction coding engine;

providing an error correction coding engine located external to the memory die, wherein the error correction coding engine located external to the memory die is configured to correct errors in information read from the memory array;

reading a first information stored in the memory array;

detecting a first error in the first read information;

using the on-die error correction coding engine for correcting the first error;

reading a second information stored in the memory array;

detecting a second error in the second read information; and

subsequently correcting the second error using the error correction coding engine located external to the memory die.

2. The method of claim 1 , further comprising bypassing the on-die error correction coding engine prior to correcting the second error.

3. The method of claim 2 , further comprising determining a number of errors generated by the memory die and comparing the number to an error threshold value, wherein the bypassing is performed in response to the number of errors exceeding the error threshold value.

4. The method of claim 1 , further comprising turning off the on-die error correction coding engine prior to correcting the second error.

5. The method of claim 1 , further comprising disabling the on-die error correction coding engine during a read or write operation prior to correcting the second error.

6. The method of claim 1 , further comprising run-time tracking of an error correction performance of the on-die error correction coding engine.

7. The method of claim 1 , further comprising providing a signal to a multiplexer to bypass the on-die error correction coding engine.

8. A memory system, comprising:

a memory die comprising a memory array and an on-die error correction coding engine; and

an error correction coding engine located externally from the memory die,

wherein both the on-die error correction coding engine and the error correction coding engine located externally from the memory die are configured to correct errors in information read from the memory array.

9. The system of claim 8 , further comprising an on-die command interpreter configured to provide to a multiplexer a signal indicating bypassing of the on-die error correction coding engine.

10. The system of claim 8 , wherein the memory array comprises phase change memory.

11. The system of claim 8 , further comprising a memory controller configured to disable the on-die error correction coding engine if the error correction coding engine located externally from the memory die is used to correct the errors.

12. The system of claim 8 , further comprising a memory controller configured to disable the on-die error correction coding engine in response to a number of errors generated by the memory die exceeding a threshold error value.

13. The system of claim 8 , further comprising a plurality of additional memory dies, wherein each individual die of the plurality of additional memory dies comprises a corresponding on-die error correction coding engine.

14. The system of claim 13 , wherein the error correction coding engine located externally from the memory die is further configured to correct errors generated by each individual die of the plurality of additional memory dies.

15. The system of claim 14 , further comprising a memory controller configured to bypass the corresponding on-die error correction coding engine of the plurality of additional memory dies if the error correction coding engine located externally from the memory die is used to correct errors generated by each individual die of the plurality of additional memory dies.

16. A system, comprising:

a memory array on a memory die;

an on-die error correction coding engine and an error correction coding engine located externally from the memory die, wherein both the on-die error correction coding engine and the error correction coding engine located externally from the memory die are configured to correct errors in information read from the memory array; and

a processor for initiating a command to a memory controller for accessing the memory array.

17. The system of claim 16 , wherein the error correction coding engine located externally from the memory die is configured to have a greater error correction capacity than the on-die error correction coding engine.

18. The system of claim 16 , wherein the memory controller is configured to disable the on-die error correction coding engine if the error correction coding engine located externally from the memory die is used to correct the errors.

19. The system of claim 18 , wherein the memory controller is configured to disable the on-die error correction coding engine during a runtime of the system.

20. The system of claim 16 , wherein the memory controller is configured to disable the on-die error correction coding engine in response to a number of errors generated by the memory die exceeding a threshold error value.

21. A method of operating a memory device comprising a memory array on a memory die, comprising:

providing the memory die, the memory die comprising:

a memory array; and

an on-die error correction coding engine;

providing an error correction coding engine located external to the memory die, wherein the error correction coding engine located external to the memory die is configured to correct errors in information read from the memory array;

reading a first information stored in the memory array;

detecting a first error in the first read information;

correcting the first error; and

performing run-time tracking of an error correction performance of the on-die error correction coding engine.

22. A method of operating a memory device comprising a memory array on a memory die, comprising:

providing the memory die, the memory die comprising:

a memory array; and

an on-die error correction coding engine;

providing an error correction coding engine located external to the memory die, wherein the error correction coding engine located external to the memory die is configured to correct errors in information read from the memory array;

reading a first information stored in the memory array;

detecting a first error in the first read information;

correcting the first error; and

providing a signal to a multiplexer to bypass the on-die error correction coding engine.