Method of manufacturing thin film transistor and method of manufacturing organic light emitting display having thin film transistor
A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm 3 to have stable electrical property.
1. A method of manufacturing a thin film transistor comprising:
forming a gate electrode on an insulating substrate;
forming a gate insulating layer on the gate electrode;
forming a semiconductor layer including oxygen ions on the gate insulating layer, the semiconductor layer including a channel region, a source region, and a drain region;
forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and
forming a passivation layer directly on the semiconductor layer and directly on the source and drain electrodes by coating a material, wherein the material is coated through a slit coating method,
wherein a carrier density of the semiconductor layer is 1E+17 to 1E+18/cm 3 .
2. The method of manufacturing the thin film transistor as claimed in claim 1 , wherein the semiconductor layer is formed of zinc oxide (ZnO).
3. The method of manufacturing the thin film transistor as claimed in claim 1 , wherein the semiconductor layer is formed of zinc oxide (ZnO) doped with at least one of gallium (Ga), indium (In), and tin (Sn).
4. The method of manufacturing the thin film transistor as claimed in claim 1 , wherein the material is at least one material selected from the group consisting of polyimide, polyacryl, spin on glass (SOG), photoresist film, and benzocyclobutane (BCB).
5. A method of manufacturing a thin film transistor comprising:
forming a gate electrode on an insulating substrate;
forming a gate insulating layer on the gate electrode;
forming a semiconductor layer including oxygen ions on the gate insulating layer, the semiconductor layer including a channel region, a source region, and a drain region;
forming a passivation layer directly on the semiconductor layer by coating a material, wherein the material is coated through a slit coating method;
forming a photoresist film on the passivation layer and then patterning the photoresist film to expose the source region and drain region of the semiconductor layer; and
forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively,
wherein a carrier density of the semiconductor layer is 1 E+17 to 1E+18/cm 3 .
6. The method of manufacturing the thin film transistor as claimed in claim 5 , wherein the semiconductor layer is formed of zinc oxide (ZnO).
7. The method of manufacturing the thin film transistor as claimed in claim 5 , wherein the semiconductor layer is formed of zinc oxide (ZnO) doped with at least one of gallium (Ga), indium (In), and tin (Sn).
8. The method of manufacturing the thin film transistor as claimed in claim 5 , wherein the material is at least one material selected from the group consisting of polyimide, polyacryl, spin on glass (SOG), photoresist film, and benzocyclobutane (BCB).
9. A method of manufacturing an organic light emitting display comprising:
forming a gate electrode on an insulating substrate;
forming a gate insulating layer on the gate electrode;
forming a semiconductor layer including oxygen ions on the gate insulating layer, the semiconductor layer including a channel region, a source region, and a drain region on the gate insulating layer;
forming a passivation layer directly on the semiconductor layer by coating a material, wherein the material is coated through a slit coating method;
forming a photoresist film on the passivation layer and then patterning the photoresist film to expose the source region and drain region of the semiconductor layer;
forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively;
forming a planarization layer on the passivation layer, the source electrode, and the drain electrode, and patterning the planarization layer to expose the source electrode or the drain electrode;
forming a first electrode on the planarization layer to contact the exposed source electrode or the drain electrode;
forming a pixel definition layer on the planarization layer and the first electrode, and exposing the first electrode in a light emitting region thereof; and
forming an organic thin film layer on the exposed first electrode and forming a second electrode on the pixel definition layer and the organic thin film layer,
wherein a carrier density of the semiconductor layer is 1E+17 to 1E+18/cm 3 .
10. The method of manufacturing the organic light emitting display as claimed in claim 9 , wherein the semiconductor layer is formed of zinc oxide (ZnO).
11. The method of manufacturing the organic light emitting display as claimed in claim 9 , wherein the semiconductor layer is formed of zinc oxide (ZnO) doped with at least one of gallium (Ga), indium (In), and tin (Sn).
12. The method of manufacturing the organic light emitting display as claimed in claim 9 , wherein the material is at least one material selected from the group consisting of polyimide, polyacryl, spin on glass (SOG), photoresist film, and benzocyclobutane (BCB).