Semiconductor materials, transistors including the same, and electronic devices including transistors
According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
1. A compound semiconductor comprising:
zinc (Zn);
nitrogen (N); and
fluorine (F), wherein a composition ratio of fluorine (F) in the compound semiconductor with respect to materials except for zinc (Zn) is 3 at % or more.
2. The compound semiconductor of claim 1 , further comprising:
oxygen (O),
wherein the compound semiconductor includes zinc oxynitride (ZnON) containing fluorine (F).
3. The compound semiconductor of claim 2 , wherein
the composition ratio of fluorine (F) with respect to materials except for zinc (Zn) in the compound semiconductor is in a range of 3 at % to 15 at %.
4. The compound semiconductor of claim 1 , wherein the compound semiconductor includes zinc fluoronitride (ZnFN).
5. The compound semiconductor of claim 1 , wherein the compound semiconductor includes an amorphous phase.
6. The compound semiconductor of claim 1 , further comprising:
at least one of a Group I element, a Group II element, a Group III element, a Group IV element, a Group V element, and a Lanthanide (Ln) element.
7. A thin film transistor (TFT) comprising:
a gate electrode;
a channel corresponding to the gate electrode, the channel including the compound semiconductor of claim 1 ;
a gate insulating layer between the gate electrode and the channel; and
a source electrode and a drain electrode respectively contacting two portions of the channel.
8. The thin film transistor of claim 7 , wherein
the compound semiconductor includes oxygen (O), and
the compound semiconductor include zinc oxynitride (ZnON) containing fluorine.
9. The thin film transistor of claim 7 , wherein the compound semiconductor include zinc fluoronitride (ZnFN).
10. The thin film transistor of claim 7 , wherein the compound semiconductor includes an amorphous phase.
11. The thin film transistor of claim 7 , wherein the compound semiconductor includes a nanocrystalline phase.
12. The thin film transistor of claim 7 , further comprising:
a substrate, wherein
the gate electrode is on the substrate,
the gate insulating layer is on the gate electrode,
the channel is on a region of the gate insulating layer corresponding to the gate electrode.
13. The thin film transistor of claim 7 , further comprising:
a substrate, wherein
the source and drain electrodes are on the substrate,
the channel is on the substrate between the source and drain electrodes,
the gate insulating layer is on the channel,
the gate electrode is on a region of the gate insulating layer corresponding to the channel.
14. The compound semiconductor of claim 1 , wherein the compound semiconductor is formed of zinc oxynitride containing fluorine.
15. The compound semiconductor of claim 1 , wherein the compound semiconductor is formed of zinc fluoronitride.
16. A compound semiconductor comprising:
zinc (Zn);
nitrogen (N); and
fluorine (F), wherein the compound semiconductor includes a nanocrystalline phase.
17. The compound semiconductor of claim 16 , wherein a composition ratio of fluorine (F) in the compound semiconductor with respect to materials except for zinc (Zn) is 3 at % or more.
18. A thin film transistor (TFT) comprising:
a gate electrode;
a channel corresponding to the gate electrode, the channel including the compound semiconductor of claim 16 ;
a gate insulating layer between the gate electrode and the channel; and
a source electrode and a drain electrode respectively contacting two portions of the channel.
19. The thin film transistor of claim 18 , further comprising:
a substrate, wherein
the gate electrode is on the substrate,
the gate insulating layer is on the gate electrode,
the channel is on a region of the gate insulating layer corresponding to the gate electrode.
20. The thin film transistor of claim 18 , a substrate, wherein
the source and drain electrodes are on the substrate,
the channel is on the substrate between the source and drain electrodes,
the gate insulating layer is on the channel,
the gate electrode is on a region of the gate insulating layer corresponding to the channel.