Semiconductor device
A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
1. A semiconductor device comprising:
a gate electrode;
a gate insulating film overlapping with the gate electrode;
a stacked-layer oxide film including a channel formation region and overlapping with the gate electrode with the gate insulating film provided therebetween; and
a source electrode and a drain electrode in contact with the stacked-layer oxide film,
wherein the stacked-layer oxide film includes a first oxide layer and a second oxide layer over the first oxide layer,
wherein the second oxide layer comprises:
a depression portion between the source electrode and the drain electrode; and
low-resistance regions in portions in contact with the source electrode and the drain electrode and part of side surfaces of the depression portion, and
wherein a depth of the depression portion is greater than a depth of the low-resistance regions in a film thickness direction.
2. The semiconductor device according to claim 1 ,
wherein the low-resistance regions have lowest resistance, and a portion of the stacked-layer oxide film has higher resistance as the portion is distanced from the source electrode or the drain electrode in the film thickness direction.
3. The semiconductor device according to claim 1 ,
wherein the first oxide layer and the second oxide layer each contain In, Zn, and a metal other than In and Zn.
4. The semiconductor device according to claim 1 , further comprising an oxide insulating film over the stacked-layer oxide film, the source electrode, and the drain electrode,
wherein the oxide insulating film is in contact with a top surface of the depression portion.
5. The semiconductor device according to claim 1 ,
wherein the low-resistance regions are formed in such a manner that oxygen in the second oxide layer is extracted into the source electrode and the drain electrode.