Photovoltaic device with aluminum plated back surface field and method of forming same
A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other. A plurality of patterned antireflective coating layers is located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed. Aluminum is located directly on the at least one portion of the p-type semiconductor surface of the semiconductor substrate that is exposed.
1. A photovoltaic device comprising:
a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other;
a plurality of patterned antireflective coating layers located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed;
an aluminum layer located on at least one portion of the p-type semiconductor surface of the semiconductor surface that is exposed; and
one or more metal layers in direct physical contact with a portion of said plurality of said patterned antireflective coating layers and in direct physical contact with an entire surface of said aluminum layer, wherein at least one portion of said plurality of said patterned antireflective coating layers are exposed.
2. The photovoltaic device of claim 1 , wherein said semiconductor substrate comprises silicon.
3. The photovoltaic device of claim 1 , wherein one of said p-type semiconductor portion or said n-type semiconductor portion of said semiconductor substrate has a textured surface.
4. The photovoltaic device of claim 1 , wherein each patterned antireflective coating layer of said plurality of patterned antireflective coating layers comprises silicon nitride.
5. The photovoltaic device of claim 1 , wherein said at least one portion of the p-type semiconductor surface of the semiconductor substrate that is exposed provides a grid pattern on said p-type semiconductor surface of the semiconductor substrate.
6. The photovoltaic device of claim 1 , wherein said photovoltaic devices further comprises a highly doped p-type semiconductor region between said aluminum layer and at least one portion of a p-type semiconductor surface of the semiconductor substrate that is exposed.
7. The photovoltaic device of claim 1 , wherein said one or more metal layers comprises Cu, Ni, Co, Fe, Mo, Cr, Ti, Ta, Au, Al, In, Ga, Ag, Pt, Pd, Rh, or alloys thereof.