IP Library › Granted Patent US 9,250,204
Granted Patent B2
US 9,250,204 · App. 14/604,959 · Granted Feb 2, 2016

Graphene sensor

Inventors: Dechao Guo (Wappingers Falls, NY); Shu-Jen Han (Cortlandt Manor, NY); Chung-Hsun Lin (White Plains, NY); Ning Su (Fishkill, NY)
Assignee: International Business Machines Corporation
G01N27/4145G01N27/4146H01L29/1606H01L29/42384H01L29/4908H01L29/66742H01L29/78684H01L51/0048
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Quick Facts
Patent No.
US 9,250,204
App. No.
14/604,959
Granted
Feb 2, 2016
Kind
B2
Abstract

A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.

Claims (14)

1. A sensor, comprising:

a fluid channel defined in a substrate, the fluid channel having a first end and a second end;

a first cavity in communication with the first end of the fluid channel, and a second cavity in communication with the second end of the fluid channel opposite the first end so as to define a fluid flow path comprising the first cavity, the fluid channel and the second cavity;

a transistor gate dielectric layer, comprising a first dielectric layer, disposed on the substrate and over the fluid channel;

a graphene layer disposed on the transistor gate dielectric layer;

a second dielectric layer disposed on the graphene layer;

a source region disposed on the transistor gate dielectric layer, the source region also in contact with a first end of the graphene layer;

a drain region disposed on the gate dielectric layer, the drain region also in contact with a second end of the graphene layer;

a capping layer disposed on a portion of the substrate; and

wherein the channel comprises a physical opening formed in the substrate so as to define a gap between a bottom surface of the gate dielectric layer and a top surface of the substrate.

2. The sensor of claim 1 , wherein the sensor includes a gate region.

3. The sensor of claim 1 , wherein the graphene layer includes a graphene tube.

4. The sensor of claim 1 , wherein the second dielectric layer has a greater thickness than the first dielectric layer.

5. The sensor of claim 1 , wherein a longitudinal axis of the channel is orthogonal to an axis that connects the source and drain regions.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 26, 2015
From: GUO, DECHAO; HAN, SHU-JEN; LIN, CHUNG-HSUN; SU, NING
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 034809/0764 →
Continuity (3)
Division 13605107 · Sep 6, 2012
Continuation 12727434 · Mar 19, 2010
Related Publication 20150137078A1 · May 21, 2015