IP Library Granted Patent US 9,252,000
Granted Patent B2
US 9,252,000 · App. 14/159,499 · Granted Feb 2, 2016

Microwave waveguide apparatus, plasma processing apparatus and plasma processing method

Inventors: Hitoshi Itoh (Tsukuba, JP); Yusuke Kubota (Tsukuba, JP); Hirotaka Toyoda (Nagoya, JP); Masaru Hori (Nagoya, JP)
Assignees: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY; TOKYO ELECTRON LIMITED
H01J37/32229H01J37/32211
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Quick Facts
Patent No.
US 9,252,000
App. No.
14/159,499
Granted
Feb 2, 2016
Kind
B2
Abstract

A microwave waveguide apparatus for generating plasma includes a waveguide which has first and second ends and propagates microwave from input end such that the microwave propagates from the first end to the second end, a circulator device having a first port, a second port coupled to the first end, and a third port coupled to the second end, the circulator device being structured such that the microwave is received at the first port, propagates from the second port to the first end, is received at the third port from the second end and is returned toward the input end, and a matching device which is interposed between the input end and the circulator device and reflects part of the microwave received at the third port and returned toward the input end to the first port. The waveguide has a slot-hole extending along the microwave propagation direction in the waveguide.

Claims (44)

1. A microwave waveguide apparatus for generating plasma, comprising:

a waveguide including an introduction waveguide and an annular waveguide, the annular waveguide having a first end portion and a second end portion and configured to propagate a microwave from an input end of the waveguide such that the microwave propagates from the first end portion to the second end portion in the annular waveguide;

a circulator device having a first port, a second port coupled to the first end portion, and a third port coupled to the second end portion, the circulator device being configured such that the microwave is received at the first port, propagates from the second port to the first end portion of the annular waveguide, is received at the third port from the second end portion and is returned toward the input end; and

a matching device interposed between the input end and the circulator device and configured to reflect a portion of the microwave received at the third port of the circulator device and returned toward the input end to the first port of the circulator device,

wherein the introduction waveguide is connected to the input end and the first port of the circulator device, and the annular waveguide has the first end portion coupled to the second port of the circulator device and the second end portion coupled to the third port of the circulator device and has a slot-hole portion extending along a propagation direction of the microwave propagating in the annular waveguide.

2. The microwave waveguide apparatus for generating plasma according to claim 1 , further comprising a first directional coupling device positioned in the annular waveguide and configured to pass the microwave propagating from the first end portion to the second end portion of the annular waveguide and block the microwave propagating from the second end portion to the first end portion of the annular waveguide.

3. The microwave waveguide apparatus for generating plasma according to claim 2 , further comprising a second directional coupling device interposed between the input end and the matching device and configured to pass the microwave propagating from the input end and block the microwave propagating from the matching device.

4. The microwave waveguide apparatus for generating plasma according to claim 2 , further comprising an isolator device interposed between the input end and the matching device and configured to guide the microwave from the input end to the matching device and guide the microwave from the matching device to a dummy port.

5. The microwave waveguide apparatus for generating plasma according to claim 2 , further comprising a microwave generating device configured to generate a pulsed microwave and supply the pulsed microwave to the input end.

6. The microwave waveguide apparatus for generating plasma according to claim 2 , wherein the annular waveguide has a gas supply hole configured to introduce a plasma generating gas into an inner space of the annular waveguide.

7. The microwave waveguide apparatus for generating plasma according to claim 1 , further comprising a second directional coupling device interposed between the input end and the matching device and configured to pass the microwave propagating from the input end and block the microwave propagating from the matching device.

8. The microwave waveguide apparatus for generating plasma according to claim 1 , further comprising an isolator device interposed between the input end and the matching device and configured to guide the microwave from the input end to the matching device and guide the microwave from the matching device to a dummy port.

9. The microwave waveguide apparatus for generating plasma according to claim 1 , further comprising a microwave generating device configured to generate a pulsed microwave and supply the pulsed microwave to the input end.

10. The microwave waveguide apparatus for generating plasma according to claim 1 , wherein the annular waveguide has a gas supply hole configured to introduce a plasma generating gas into an inner space of the annular waveguide.

11. A plasma processing apparatus, comprising:

the microwave waveguide apparatus of claim 1 ;

a gas supply device configured to supply a gas such that the gas receives energy of the microwave supplied to the slot-hole portion of the annular waveguide; and

a processing container having a space configured such that plasma generated from the gas processes a process target.

12. The plasma processing apparatus according to claim 11 , wherein the microwave waveguide apparatus is configured to generate dotted plasma which moves along the propagation direction of the microwave.

13. A method for processing plasma, comprising:

placing the process target in the processing container of the microwave waveguide apparatus of claim 12 such that the process target is held inside the space of the processing container;

supplying the gas from the gas supply device of the microwave waveguide apparatus of claim 12 such that the gas receives energy of the microwave supplied to the slot-hole portion of the annular waveguide of the microwave waveguide apparatus of claim 12 ; and

applying the plasma generated from the gas to the process target such that the plasma processes the process target in the processing container of the microwave waveguide apparatus of claim 12 .

14. The method for processing plasma according to claim 13 , wherein the gas is a hydrogen gas having a hydrogen concentration in a range of 0.1% to 4%.

15. A method for processing plasma, comprising:

placing the process target in the processing container of the microwave waveguide apparatus of claim 11 such that the process target is held inside the space of the processing container;

supplying the gas from the gas supply device of the microwave waveguide apparatus of claim 11 such that the gas receives energy of the microwave supplied to the slot-hole portion of the annular waveguide of the microwave waveguide apparatus of claim 11 ; and

applying the plasma generated from the gas to the process target such that the plasma processes the process target in the processing container of the microwave waveguide apparatus of claim 11 .

16. The method for processing plasma according to claim 15 , wherein the gas is a hydrogen gas having a hydrogen concentration in a range of 0.1% to 4%.

17. A plasma processing apparatus, comprising:

a microwave generating device configured to generate a microwave and supply the microwave to an input end;

a waveguide including an introduction waveguide and an annular waveguide, the annular waveguide having a first end portion and a second end portion and configured to propagate the microwave from the input end of the waveguide such that the microwave propagates from the first end portion to the second end portion in the annular waveguide, the annular waveguide having a and a slot-hole portion extending along a propagation direction of the microwave propagating in the annular waveguide;

a circulator device having a first port, a second port coupled to the first end portion, and a third port coupled to the second end portion, the circulator device being configured such that the microwave is received at the first port, propagates from the second port to the first end portion of the annular waveguide, is received at the third port from the second end portion and is returned toward the input end;

a matching device interposed between the input end and the circulator device and configured to reflect a portion of the microwave received at the third port of the circulator device and returned toward the input end to the first port of the circulator device;

a first directional coupling device positioned in the annular waveguide and configured to pass the microwave propagating from the first end portion to the second end portion of the annular waveguide and block the microwave propagating from the second end portion to the first end portion of the annular waveguide;

a gas supply device configured to supply a gas such that the gas receives energy of the microwave supplied to the slot-hole portion of the annular waveguide; and

a processing container having a space configured such that plasma generated from the gas processes a process target,

wherein the introduction waveguide is connected to the input end and the first port of the circulator device, and the annular waveguide has the first end portion coupled to the second port of the circulator device and the second end portion coupled to the third port of the circulator device and has the slot-hole portion extending along the propagation direction of the microwave propagating in the annular waveguide.

18. A method for processing plasma, comprising:

placing the process target in the processing container of the microwave waveguide apparatus of claim 17 such that the process target is held inside the space of the processing container;

supplying the gas from the gas supply device of the microwave waveguide apparatus of claim 17 such that the gas receives energy of the microwave supplied to the slot-hole portion of the annular waveguide of the microwave waveguide apparatus of claim 17 ; and

applying the plasma generated from the gas to the process target such that the plasma processes the process target in the processing container of the microwave waveguide apparatus of claim 17 .

19. The method for processing plasma according to claim 18 , wherein the gas is a hydrogen gas having a hydrogen concentration in a range of 0.1% to 4%.

20. The plasma processing apparatus according to claim 17 , further comprising a second directional coupling device interposed between the input end and the matching device and configured to pass the microwave propagating from the input end and block the microwave propagating from the matching device.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 27, 2022
From: TOKYO ELECTRON LIMITED
To: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM
Reel/Frame 060319/0605 →
CHANGE OF NAME Recorded Jun 27, 2022
From: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
To: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM
Reel/Frame 060444/0327 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2014
From: ITOH, HITOSHI; KUBOTA, YUSUKE
To: TOKYO ELECTRON LIMITED
Reel/Frame 032282/0779 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2014
From: TOYODA, HIROTAKA; HORI, MASARU
To: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
Reel/Frame 032282/0855 →
Priority Claims (1)
JP 2013-043404 · Mar 5, 2013 · national
Continuity (1)
Related Publication 20140251955A1 · Sep 11, 2014