IP Library › Granted Patent US 9,257,363
Granted Patent B2
US 9,257,363 · App. 14/572,655 · Granted Feb 9, 2016

Semiconductor device and method of manufacturing the same

Inventors: Kenta Nakahara (Tokyo, JP); Hiroshi Yoshida (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
H01L23/4275H01L23/3675H01L23/3735H01L23/4006H01L33/641H01L35/30H01L2924/13055
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Quick Facts
Patent No.
US 9,257,363
App. No.
14/572,655
Granted
Feb 9, 2016
Kind
B2
Abstract

A base plate has a mounting surface on which a semiconductor element is mounted and a heat-radiation surface for radiating heat to a cooler. The cover has a portion that seals the semiconductor element on the mounting surface of the base plate. The cover has a projecting portion arranged outside the heat-radiation surface and projecting from a level of the heat-radiation surface in a thickness direction. The intermediate layer is arranged on the heat-radiation surface of the base plate, projects from the level of the projecting portion of the cover in a thickness direction, and is made of a thermoplastic material in a solid-phase state.

Claims (21)

1. A method of manufacturing a semiconductor device having a heat-radiation surface for radiating heat to a cooler, comprising:

preparing a base plate having a mounting surface, said heat-radiation surface opposed to said mounting surface, and a thickness direction extending from said mounting surface to said heat-radiation surface;

mounting a semiconductor element on said mounting surface; and

forming a cover having a portion that seals said semiconductor element on said mounting surface of said base plate, said cover having a projecting portion arranged outside said heat-radiation surface and projecting from a level of said heat-radiation surface in said thickness direction, and

forming an intermediate layer arranged on said heat-radiation surface of said base plate, projecting from a level of said projecting portion in said thickness direction, and made of a thermoplastic material in a solid-phase state,

wherein the forming of said intermediate layer includes applying a thermoplastic material in a liquid-phase state on said heat-radiation surface by moving a squeegee on a mask plate arranged on said heat-radiation surface of said base plate.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein the applying of said thermoplastic material includes adjusting a pressure for pressing said squeegee against said mask plate.

3. The method of manufacturing a semiconductor device according to claim 1 , wherein said squeegee has a contact portion brought into contact with said mask plate, and said contact portion has at least one of a protruding portion and a recessed portion.

4. A semiconductor device having a heat-radiation surface for radiating heat to a cooler, comprising:

a semiconductor element;

a base plate having a mounting surface on which said semiconductor element is mounted, said heat-radiation surface opposed to said mounting surface, and a thickness direction extending from said mounting surface to said heat-radiation surface;

a cover having a portion that seals said semiconductor element on said mounting surface of said base plate, said cover having a projecting portion arranged outside said heat-radiation surface and projecting from a level of said heat-radiation surface in said thickness direction; and

an intermediate layer arranged on said heat-radiation surface of said base plate, projecting from a level of said projecting portion of said cover in said thickness direction, and made of a thermoplastic material in a solid-phase state.

5. The semiconductor device according to claim 4 , wherein said intermediate layer has a plurality of patterns separated from each other on said heat-radiation surface of said base plate.

6. The semiconductor device according to claim 4 , wherein said intermediate layer has different thicknesses on said heat-radiation surface of said base plate.

7. The semiconductor device according to claim 4 , wherein said cover has a housing having said projecting portion and a sealing material arranged in said housing.

8. The semiconductor device according to claim 7 , wherein said base plate has a plurality of portions coupled to each other by said housing.

9. The semiconductor device according to claim 7 , wherein said housing has a facing surface facing said cooler, and said projecting portion projects from said facing surface.

10. The semiconductor device according to claim 7 , wherein a through hole for attaching said cooler is formed in said housing, and said projecting portion is configured by a metal bushing inserted into said through hole.

11. The semiconductor device according to claim 7 , wherein said projecting portion is made of a thermoplastic material.

12. The semiconductor device according to claim 7 , wherein said projecting portion is configured by an adhesive portion that bonds said housing and said sealing material to each other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 16, 2014
From: NAKAHARA, KENTA; YOSHIDA, HIROSHI
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 034522/0349 →
Priority Claims (1)
JP 2014-045924 · Mar 10, 2014 · national
Continuity (1)
Related Publication 20150255367A1 · Sep 10, 2015