Display device and semiconductor device
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
1. A semiconductor device comprising:
a first transistor comprising a first semiconductor layer including a first channel formation region;
a second transistor comprising a second semiconductor layer including a second channel formation region;
a first wiring electrically connected to one of a source and a drain of the first transistor;
a second wiring electrically connected to one of a source and a drain of the second transistor;
a first conductive layer electrically connected to the other of the source and the drain of the first transistor;
a second conductive layer electrically connected to the other of the source and the drain of the second transistor; and
an electrode,
wherein the first channel formation region is capable of flowing carriers to a first direction,
wherein the second channel formation region is capable of flowing carriers to the first direction,
wherein the first wiring is capable of flowing a current in a second direction,
wherein the second wiring is capable of flowing a current in the second direction,
wherein the first conductive layer is capable of being a first electrode of a first capacitor,
wherein the second conductive layer is capable of being a first electrode of a second capacitor,
wherein the electrode is capable of being a second electrode of the first capacitor and a second electrode of the second capacitor, and
wherein the first direction intersects with the second direction.
2. The semiconductor device according to claim 1 , wherein a longitudinal direction of the first conductive layer is parallel to the second direction.
3. The semiconductor device according to claim 1 ,
wherein the first semiconductor layer includes a region,
wherein the region is capable of being one of a source region and a drain region, and
wherein a longitudinal direction of the region is parallel to the second direction.
4. The semiconductor device according to claim 1 , wherein the first semiconductor layer includes a third channel formation region.
5. The semiconductor device according to claim 1 , wherein a shape of the first channel formation region is a rectangular shape.
6. A semiconductor device comprising:
a first transistor comprising a first semiconductor layer including a first channel formation region;
a second transistor comprising a second semiconductor layer including a second channel formation region;
a first wiring electrically connected to one of a source and a drain of the first transistor;
a second wiring electrically connected to one of a source and a drain of the second transistor;
a first conductive layer electrically connected to the other of the source and the drain of the first transistor;
a second conductive layer electrically connected to the other of the source and the drain of the second transistor; and
an electrode,
wherein the first channel formation region is capable of flowing carriers to a first direction,
wherein the second channel formation region is capable of flowing carriers to the first direction,
wherein a longitudinal direction of the first wiring is parallel to a second direction,
wherein a longitudinal direction of the second wiring is parallel to the second direction,
wherein the first conductive layer is capable of being a first electrode of a first capacitor,
wherein the second conductive layer is capable of being a first electrode of a second capacitor,
wherein the electrode is capable of being a second electrode of the first capacitor and a second electrode of the second capacitor, and
wherein the first direction intersects with the second direction.
7. The semiconductor device according to claim 6 , wherein a longitudinal direction of the first conductive layer is parallel to the second direction.
8. The semiconductor device according to claim 6 ,
wherein the first semiconductor layer includes a region,
wherein the region is capable of being one of a source region and a drain region, and
wherein a longitudinal direction of the region is parallel to the second direction.
9. The semiconductor device according to claim 6 , wherein the first semiconductor layer includes a third channel formation region.
10. The semiconductor device according to claim 6 , wherein a shape of the first channel formation region is a rectangular shape.
11. A semiconductor device comprising:
a first transistor comprising a first semiconductor layer including a first channel formation region;
a second transistor comprising a second semiconductor layer including a second channel formation region;
a first wiring electrically connected to one of a source and a drain of the first transistor;
a second wiring electrically connected to one of a source and a drain of the second transistor;
a first conductive layer electrically connected to the other of the source and the drain of the first transistor;
a second conductive layer electrically connected to the other of the source and the drain of the second transistor; and
an electrode,
wherein a channel length direction of the first transistor is parallel to a first direction,
wherein a channel length direction of the second transistor is parallel to the first direction,
wherein the first wiring is capable of flowing a current in a second direction,
wherein the second wiring is capable of flowing a current in the second direction,
wherein the first conductive layer is capable of being a first electrode of a first capacitor,
wherein the second conductive layer is capable of being a first electrode of a second capacitor,
wherein the electrode is capable of being a second electrode of the first capacitor and a second electrode of the second capacitor, and
wherein the first direction intersects with the second direction.
12. The semiconductor device according to claim 11 , wherein a longitudinal direction of the first conductive layer is parallel to the second direction.
13. The semiconductor device according to claim 11 ,
wherein the first semiconductor layer includes a region,
wherein the region is capable of being one of a source region and a drain region, and
wherein a longitudinal direction of the region is parallel to the second direction.
14. The semiconductor device according to claim 11 , wherein the first semiconductor layer includes a third channel formation region.
15. The semiconductor device according to claim 11 , wherein a shape of the first channel formation region is a rectangular shape.
16. A semiconductor device comprising:
a first transistor comprising a first semiconductor layer including a first channel formation region;
a second transistor comprising a second semiconductor layer including a second channel formation region;
a first wiring electrically connected to one of a source and a drain of the first transistor;
a second wiring electrically connected to one of a source and a drain of the second transistor;
a first conductive layer electrically connected to the other of the source and the drain of the first transistor;
a second conductive layer electrically connected to the other of the source and the drain of the second transistor; and
an electrode,
wherein a channel length direction of the first transistor is parallel to a first direction,
wherein a channel length direction of the second transistor is parallel to the first direction,
wherein a longitudinal direction of the first wiring is parallel to a second direction,
wherein a longitudinal direction of the second wiring is parallel to the second direction,
wherein the first conductive layer is capable of being a first electrode of a first capacitor,
wherein the second conductive layer is capable of being a first electrode of a second capacitor,
wherein the electrode is capable of being a second electrode of the first capacitor and a second electrode of the second capacitor, and
wherein the first direction intersects with the second direction.
17. The semiconductor device according to claim 16 , wherein a longitudinal direction of the first conductive layer is parallel to the second direction.
18. The semiconductor device according to claim 16 ,
wherein the first semiconductor layer includes a region,
wherein the region is capable of being one of a source region and a drain region, and
wherein a longitudinal direction of the region is parallel to the second direction.
19. The semiconductor device according to claim 16 , wherein the first semiconductor layer includes a third channel formation region.
20. The semiconductor device according to claim 16 , wherein a shape of the first channel formation region is a rectangular shape.