Solid-state imaging device and camera module
A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and a light-blocking side wall. The plurality of arrayed pixels each includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is provided for blocking infrared light and formed facing toward a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The light-blocking side wall is formed on a lateral wall of the optical inner filter layer.
1. A solid-state imaging device, comprising:
a plurality of arrayed pixels each including a photoelectric conversion portion and a pixel transistor;
an optical inner filter layer for blocking infrared light, which is formed facing toward a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels; and
a light-blocking side wall formed on a lateral wall of the optical inner filter layer, wherein
the side wall is formed of a metal film.
2. A solid-state imaging device, comprising:
a plurality of arrayed pixels each including a photoelectric conversion portion and a pixel transistor;
an optical inner filter layer for blocking infrared light, which is formed facing toward a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels; and
a light-blocking side wall formed on a lateral wall of the optical inner filter layer,
wherein the side wall is made of a material with a refractive index different from that of a light-transmissive layer between the optical inner filter layers adjacent to each other.
3. The solid-state imaging device according to claim 2 , wherein
a plurality of wiring layers is formed of stacked films including a line and an insulating interlayer above the light-receiving surface, and
an inner-layer lens is formed between the plurality of wiring layers, facing toward the light-receiving surface of the photoelectric conversion portion.
4. A solid-state imaging device, comprising:
a second pixel between a first pixel and a third pixel, each of the first, second, and third pixels including a photoelectric conversion portion,
an optical inner filter layer on a light receiving side of the photoelectric conversion portion of each of the first and third pixels, and
a light-blocking side wall on a lateral wall of the optical inner filter layer,
wherein the light-blocking side wall is a metal film, and
wherein the metal film is tungsten, aluminum, or titanium.