Photoelectric conversion apparatus
A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.
1. A photoelectric conversion apparatus comprising:
a semiconductor substrate;
a plurality of photoelectric conversion portions provided in the semiconductor substrate;
an insulator provided on the semiconductor substrate;
a first member provided on the semiconductor substrate and configured to overlap with the photoelectric conversion portion, the first member forming a waveguide;
a first lens provided on the first member;
a color filter provided on the first member;
a second member provided between the first member and the first lens, and
a third member provided between the first member and the second member,
wherein the photoelectric conversion portion and the first member are provided in line along a first direction,
wherein the insulator includes a first portion and a second portion that is different from the first portion,
wherein the first portion, the first member, and the second portion are provided in line along a second direction intersecting the first direction,
wherein a material of the first lens includes silicon nitride,
wherein a material of the first member includes silicon nitride,
wherein a material of the second member includes silicon oxide, and
wherein a material of the third member includes silicon oxy-nitride.
2. The photoelectric conversion apparatus according to claim 1 , satisfying the following expressions:
d1 >p /8X
d1<3 p /8X
where d 1 denotes a thickness of the third member, X denotes a refractive index of the material of the third member, and p denotes a wavelength of light selected by the color filter.
3. The photoelectric conversion apparatus according to claim 1 , further comprising a fourth member provided between the second member and the first lens,
wherein a material of the fourth member includes silicon oxy-nitride.
4. The photoelectric conversion apparatus according to claim 3 , satisfying the following expressions:
d2 >p /8Y
d2<3 p /8Y
where d 2 denotes a thickness of the fourth member, Y denotes a refractive index of the material of the fourth member, and p denotes a wavelength of light selected by the color filter.
5. The photoelectric conversion apparatus according to claim 1 , further comprising a wiring layer including a conducting member,
wherein a first distance from the semiconductor substrate to a surface of the farther side of the first member from the semiconductor substrate is longer than a second distance from the semiconductor substrate to a surface of the farther side of the conducting member from the semiconductor substrate, and
wherein a third distance from the semiconductor substrate to a surface of a closer side of the first member to the semiconductor substrate is shorter than a fourth distance from the semiconductor substrate to a surface of a closer side of the conducting member to the semiconductor substrate.
6. The photoelectric conversion apparatus according to claim 1 ,
wherein the semiconductor substrate includes an image pickup area provided therein with a plurality of photoelectric conversion portions, and a circuit area provided therein with a circuit configured to process signals from the photoelectric conversion portions, and
wherein the second member is provided at least over the image pickup area and the circuit area.
7. The photoelectric conversion apparatus according to claim 1 , wherein a refractive index of the material of the first member is higher than a refractive index of the insulator.
8. The photoelectric conversion apparatus according to claim 1 , wherein a reflective member configured to reflect light passing through the first member is provided between the first member and the insulator.
9. The photoelectric conversion apparatus according to claim 1 , wherein an air gap is provided between the first member and the insulator.
10. The photoelectric conversion apparatus according to claim 1 , further comprising:
wherein the plurality of photoelectric conversion portions include a first photoelectric conversion portion and a second photoelectric conversion portion different from the first photoelectric conversion portion, and
wherein the first member extends over the first photoelectric conversion portion, over a region between the first photoelectric conversion portion and the second photoelectric conversion portion and over the second photoelectric conversion portion.
11. The photoelectric conversion apparatus according to claim 1 ,
wherein an area of a surface of a closer side of the first lens to the semiconductor substrate is larger than an area of a surface of the farther side of the first member from the photoelectric conversion portion.
12. The photoelectric conversion apparatus according to claim 1 , further comprising:
a second lens provided on the first lens.
13. A photoelectric conversion apparatus comprising:
a semiconductor substrate;
a plurality of photoelectric conversion portions provided in the semiconductor substrate;
an insulator provided on the semiconductor substrate;
a first member provided on the semiconductor substrate and configured to overlap with the photoelectric conversion portion, the first member forming a waveguide;
a first lens provided on the first member;
a color filter provided on the first member;
a second member provided between the first member and the first lens, and
a fourth member provided between the second member and the first lens,
wherein the photoelectric conversion portion and the first member are provided in line along a first direction,
wherein the insulator includes a first portion and a second portion that is different from the first portion,
wherein the first portion, the first member, and the second portion are provided in line along a second direction intersecting the first direction,
wherein a material of the first lens includes silicon nitride,
wherein a material of the first member includes silicon nitride,
wherein a material of the second member includes silicon oxide, and
wherein a material of the fourth member includes silicon oxy-nitride.
14. The photoelectric conversion apparatus according to claim 13 , satisfying the following expressions:
d2 >p /8Y
d2<3 p /8Y
where d 2 denotes a thickness of the fourth member, Y denotes a refractive index of the material of the fourth member, and p denotes a wavelength of light selected by the color filter.
15. The photoelectric conversion apparatus according to claim 13 , further comprising a wiring layer including a conducting member,
wherein a first distance from the semiconductor substrate to a surface of the farther side of the first member from the semiconductor substrate is longer than a second distance from the semiconductor substrate to a surface of the farther side of the conducting member from the semiconductor substrate, and
wherein a third distance from the semiconductor substrate to a surface of a closer side of the first member to the semiconductor substrate is shorter than a fourth distance from the semiconductor substrate to a surface of a closer side of the conducting member to the semiconductor substrate.
16. The photoelectric conversion apparatus according to claim 13 ,
wherein the semiconductor substrate includes an image pickup area provided therein with a plurality of photoelectric conversion portions, and a circuit area provided therein with a circuit configured to process signals from the photoelectric conversion portions, and
wherein the second member is provided at least over the image pickup area and the circuit area.
17. The photoelectric conversion apparatus according to claim 13 , wherein a refractive index of the material of the first member is higher than a refractive index of the insulator.
18. The photoelectric conversion apparatus according to claim 13 , wherein a reflective member configured to reflect light passing through the first member is provided between the first member and the insulator.
19. The photoelectric conversion apparatus according to claim 13 , wherein an air gap is provided between the first member and the insulator.
20. The photoelectric conversion apparatus according to claim 13 , further comprising:
wherein the plurality of photoelectric conversion portions include a first photoelectric conversion portion and a second photoelectric conversion portion different from the first photoelectric conversion portion, and
wherein the first member extends over the first photoelectric conversion portion, over a region between the first photoelectric conversion portion and the second photoelectric conversion portion and over the second photoelectric conversion portion.
21. The photoelectric conversion apparatus according to claim 13 , wherein an area of a surface of a closer side of the first lens to the semiconductor substrate is larger than an area of a surface of the farther side of the first member from the photoelectric conversion portion.
22. The photoelectric conversion apparatus according to claim 13 , further comprising:
a second lens provided on the first lens.
23. A photoelectric conversion apparatus comprising:
a semiconductor substrate;
a plurality of photoelectric conversion portions provided in the semiconductor substrate;
an insulator provided on the semiconductor substrate;
a first member provided on the semiconductor substrate and configured to overlap with the photoelectric conversion portion;
a first lens provided on the first member;
a color filter provided on the first member;
a second member provided between the first member and the first lens, and
a third member provided between the first member and the second member;
a fourth member provided between the second member and the first lens,
wherein the photoelectric conversion portion and the first member are provided in line along a first direction,
wherein the insulator includes a first portion and a second portion that is different from the first portion,
wherein the first portion, the first member, and the second portion are provided in line along a second direction intersecting the first direction,
wherein a material of the first lens includes silicon nitride,
wherein a material of the first member includes silicon nitride,
wherein a material of the second member includes silicon oxide, and
wherein a material of the third member includes silicon oxy-nitride,
wherein a material of the fourth member includes silicon oxy-nitride.
24. A photoelectric conversion apparatus comprising:
a semiconductor substrate;
a plurality of photoelectric conversion portions provided in the semiconductor substrate;
an insulator provided on the semiconductor substrate;
a first member provided on the semiconductor substrate and configured to overlap with the photoelectric conversion portion;
a wiring layer including a conducting member;
a first lens provided on the first member;
a color filter provided on the first member;
a second member provided between the first member and the first lens, and
a third member provided between the first member and the second member,
wherein the photoelectric conversion portion and the first member are provided in line along a first direction,
wherein the insulator includes a first portion and a second portion that is different from the first portion,
wherein the first portion, the first member, and the second portion are provided in line along a second direction intersecting the first direction,
wherein a material of the first lens includes silicon nitride,
wherein a material of the first member includes silicon nitride,
wherein a material of the second member includes silicon oxide, and
wherein a material of the third member includes silicon oxy-nitride,
wherein a first distance from the semiconductor substrate to a surface of the farther side of the first member from the semiconductor substrate is longer than a second distance from the semiconductor substrate to a surface of the farther side of the conducting member from the semiconductor substrate, and
wherein a third distance from the semiconductor substrate to a surface of a closer side of the first member to the semiconductor substrate is shorter than a fourth distance from the semiconductor substrate to a surface of a closer side of the conducting member to the semiconductor substrate.
25. A photoelectric conversion apparatus comprising:
a semiconductor substrate;
a plurality of photoelectric conversion portions provided in the semiconductor substrate;
an insulator provided on the semiconductor substrate;
a first member provided on the semiconductor substrate and configured to overlap with the photoelectric conversion portion;
a wiring layer including a conducting member;
a first lens provided on the first member;
a color filter provided on the first member;
a second member provided between the first member and the first lens, and
a fourth member provided between the second member and the first lens,
wherein the photoelectric conversion portion and the first member are provided in line along a first direction,
wherein the insulator includes a first portion and a second portion that is different from the first portion,
wherein the first portion, the first member, and the second portion are provided in line along a second direction intersecting the first direction,
wherein a material of the first lens includes silicon nitride,
wherein a material of the first member includes silicon nitride,
wherein a material of the second member includes silicon oxide, and
wherein a material of the fourth member includes silicon oxy-nitride,
wherein a first distance from the semiconductor substrate to a surface of the farther side of the first member from the semiconductor substrate is longer than a second distance from the semiconductor substrate to a surface of the farther side of the conducting member from the semiconductor substrate, and
wherein a third distance from the semiconductor substrate to a surface of a closer side of the first member to the semiconductor substrate is shorter than a fourth distance from the semiconductor substrate to a surface of a closer side of the conducting member to the semiconductor substrate.