Methods of fabricating semiconductor devices with electrode support patterns

1. A method comprising:

sequentially forming a first mold film comprising a lower first mold film and an upper first mold film on the lower first mold film, a first support film, a second mold film, and a second support film on a substrate,

wherein the upper first mold film has a different etch rate than the lower first mold film;

forming a contact hole through the second support film, the second mold film, the first support film and the first mold film;

forming an electrode in the contact hole; and

removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode.

2. The method of claim 1 , wherein the second support film comprises an upper second support film and a lower second support film, and wherein removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode comprises removing a portion of the lower second support film.

3. The method of claim 2 , wherein the upper second support film is in contact with the lower second support film.

4. The method of claim 2 , wherein removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode comprises:

forming a trench exposing the lower second support film; and

removing the portion of the lower second support film and the portion of the second mold film using the trench as an etchant passage.

5. The method of claim 4 , wherein the trench comprises a first trench and wherein removing portions of the second support film, the second mold film and the first mold film to leave a portion of the first support film as a first support pattern surrounding the electrode and to leave a portion of the second support film as a second support pattern surrounding the electrode further comprises:

forming a second trench exposing the first mold film; and

removing the portion of the first mold film using the second trench as an etchant passage.

6. The method of claim 2 , wherein a thickness of the lower second support film is about 0.1 to about 0.9 times a thickness of the second support film.

7. The method of claim 1 , wherein the forming of the contact hole comprises:

forming a node mask on the second support film; and

etching the second support film, the second mold film, the first support film and the first mold film using the node mask as a mask.

8. The method of claim 7 , wherein forming an electrode in the contact hole comprises:

forming an electrode film conforming to an inner wall of the contact hole and a top surface of the node mask;

forming a sacrificial film on the electrode film in the contact hole; and

removing portions of the electrode film to expose the second support film.

9. The method of claim 1 , further comprising:

forming a dielectric film on the electrode and the first and second support patterns; and

forming another electrode on the dielectric film.

10. A method comprising:

sequentially forming a first mold film, a first support film, a second mold film, a lower second support film and an upper second support film on a substrate;

forming a contact hole in the first mold film, the first support film, the second mold film, the lower second support film and the upper second support film;

forming an electrode film in the contact hole;

removing portions of the lower second support film and the second mold film to leave a portion of the upper second support film as a support pattern surrounding the electrode film; and

forming an electrode in the contact hole by removing a portion of the electrode film to expose the support pattern.

11. The method of claim 10 , wherein removing portions of the lower second support film and the second mold film to leave a portion of the upper second support film as a support pattern surrounding the electrode film comprises:

forming a trench exposing the lower second support film; and

removing the portions of the lower second support film and the second mold film after the forming of the first trench.

12. The method of claim 11 :

wherein forming an electrode film in the contact hole comprises forming the electrode film to conform to an inner wall of the contact hole;

wherein forming an electrode in the contact hole by removing a portion of the electrode film to expose the support pattern is preceded by forming a sacrificial film on the electrode film in the contact hole; and

wherein forming an electrode in the contact hole by removing a portion of the electrode film to expose the support pattern comprises:

removing portions of the sacrificial film and the electrode film to expose the support pattern; and

removing the sacrificial film.

13. A method comprising:

sequentially forming a mold film and a support film on a conductive region in a substrate;

removing portions of the support film and the mold film to form a contact hole passing through the support film and the mold film and exposing the conductive region;

forming an electrode in the contact hole and in electrical contact with the conductive region;

forming a trench through the support film and exposing portions of the support film and the mold film; and

etching the exposed portions of the support film to remove at least a portion of the mold film and leave a portion of the support film as a support pattern surrounding the electrode.

14. The method of claim 13 , wherein etching the exposed portions of the support film to remove at least a portion of the mold film and leave a portion of the support film as a support pattern surrounding the electrode comprises removing a lower portion of the support film while leaving an upper portion of the support film as the support pattern.

15. The method of claim 13 , wherein the electrode comprises an electrode film conforming to an inner wall of the contact hole, and further comprising forming a dielectric layer on the electrode film and another electrode on the dielectric layer.

16. The method of claim 13 , wherein the contact hole has a stepped inner wall.

17. The method of claim 16 , wherein the contact hole has a step proximate an interface of the mold layer and the support layer.

18. The method of claim 13 :

wherein sequentially forming a mold film and a support film on a conductive region in a substrate comprises sequentially forming a first mold film, a first support film, a second mold film and a second support film on the conductive region;

wherein removing portions of the support film and the mold film to form a contact hole passing through the support film and the mold film and exposing the conductive region comprises removing portions of the second support film, the second mold film, the first support film and the first mold film to form the contact hole;

wherein forming a trench through the support film and exposing portions of the support film and the mold film comprises forming a first trench through the second support film exposing portions of the second support film and the second mold film;

wherein etching the exposed portions of the support film to remove at least a portion of the mold film and leave a portion of the support film as a support pattern surrounding the electrode comprises etching the exposed portions of the second support film and the second mold film to leave a portion of the second support film as a first support pattern surrounding the electrode;

wherein forming a trench through the support film and exposing portions of the support film and the mold film further comprises forming a second trench through the first support film exposing portions of the first support film and the first mold film; and

wherein etching the exposed portions of the support film to remove at least a portion of the mold film and leave a portion of the support film as a support pattern surrounding the electrode comprises etching the exposed portion of the first mold film to leave a portion of the first support film as a second support pattern surrounding the electrode.