Organic semiconductor component comprising a doped hole conductor layer
An organic semiconductor component with a hole conductor layer having p-type doping with a superacid salt has greatly improved charged transport and optical properties. Besides increasing the specific conductivity at very low doping concentrations, the doping brings about substantially no negative change in the color impression of the layer for the human eye. The absorbtivity of the hole conductor layer is not increased in the visible wavelength range as a result of the p-type doping with the superacid salt. Deposition from solution and from the gas phase is possible.
1. A semiconductor component comprising:
an organic hole conductor layer having p-doping with a superacid salt, the superacid salt comprising a salt of a superacid, the superacid being an acid having an acid constant value pK a less than −4.
2. The semiconductor component as claimed in claim 1 , wherein the hole conductor layer having p-doping has a specific conductivity of at least 2.5·10 −5 S/m at a dopant concentration of not more than 20% by volume.
3. The semiconductor component as claimed in claim 1 , wherein
the organic hole conductor layer having p-doping comprises a given composition and the p-doping,
an organic hole conductor layer having the given composition but excluding the p-doping has a first absorption capacity in a wavelength range between 400 nm and 700 nm, and
the hole conductor layer having the p-doping has a second absorption capacity in the wavelength range between 400 nm and 700 nm,
the second absorption capacity is not substantially increased relative to the first absorption capacity, such that the organic hole conductor layer having the given composition but excluding the p-doping has substantially the same color impression to a human eye as the hole conductor layer having the p-doping.
4. The semiconductor component as claimed in claim 1 , wherein the superacid salt is a metal salt of a superacid.
5. The semiconductor component as claimed in claim 1 , wherein the superacid salt comprises a triflate, the triflate being a metal salt of trifluoromethanesulfonic acid.
6. The semiconductor component as claimed in claim 5 , wherein the metal salt has cations of transition metals.
7. The semiconductor component as claimed in claim 1 , wherein the superacid salt comprises silver(I) trifluoromethanesulfonate (Ag(I)TFMS).
8. The semiconductor component as claimed in claim 1 , wherein the superacid salt comprises copper(II) trifluoromethanesulfonate (Cu(II)TFMS).
9. A production process for a semiconductor component, comprising:
depositing an organic hole conductor layer having p-doping with a superacid salt, the superacid salt comprising a salt of a superacid, the superacid being an acid having an acid constant value pK a less than −4.
10. The production process as claimed in claim 9 , wherein
the organic hole conductor layer is deposited by depositing a matrix material together with the superacid salt in a combined deposition process.
11. The production process as claimed in claim 10 , wherein the matrix material and the superacid salt are deposited from the gas phase, by thermal vaporization.
12. The production process as claimed in claim 11 , wherein
the matrix material and the superacid salt are deposited from the gas phase by covaporization, and
the production process further comprises adjusting a dopant concentration of the superacid salt in the hole conductor layerby adjusting relative vaporization rates of the superacid salt and the matrix material.
13. The production process as claimed in claim 9 , wherein the matrix material and the superacid salt are deposited from solution.
14. The production process as claimed in claim 13 , wherein
the production process further comprises adjusting a dopant concentration of the superacid salt in the hole conductor layerby adjusting a mass proportion of the superacid salt in solution relative to a mass proportion in solution of the matrix material, and
the dopant concentration is adjusted prior to deposition.
15. An organic light-emitting diode comprising:
a transparent substrate;
a lower electrode formed on the substrate;
a layer stack formed on the lower electrode, the layer stack comprising:
an organic hole transport layer having p-doping with a superacid salt, the superacid salt comprising a salt of a superacid, the superacid being an acid having an acid constant value PK a less than −4;
a light emission layer; and
an electron transport layer; and
an upper electrode.