RRAM memory device and method thereof
A resistive random-access memory (RRAM) device and a method thereof are disclosed. The RRAM device is contains a plurality of bit cells, a plurality of word lines, a plurality of bit lines and a plurality of source lines. Each bit cell includes a transistor and resistive element, the transistor includes a gate, a source and a drain, and the resistive element is coupled to the drain of the transistor. The plurality of word lines are arranged in parallel to one another, and coupled to respective gates of the transistors. The plurality of bit lines are arranged in parallel to one another and being intersected with the plurality of word lines, and coupled to respective drains of the transistors through the resistive elements. The plurality of source lines are arranged in parallel to one another and the plurality of bit lines.
1. A resistive random-access memory (RRAM) device, comprising:
a plurality of bit cells, each including a transistor and resistive element, wherein for each cell, the transistor includes a gate, a source and a drain, and the resistive element is coupled to the drain of the transistor;
a plurality of word lines, arranged in parallel to one another, and coupled to respective gates of the transistors;
a plurality of bit lines, arranged in parallel to one another and being intersected with the plurality of word lines, and coupled to respective drains of the transistors through the resistive elements; and
a plurality of source lines, arranged in parallel to one another and the plurality of bit lines;
wherein each source line is coupled to respective sources of the transistors of two adjacent bit cells of the plurality of bit cells; and
wherein when a first bit cell adjacent to a second bit cell of the plurality of bit cells is reset, only a second bit line connected to a second drain of the transistor of the second bit cell is pre-charged to a “HIGH” voltage.
2. The RRAM device of claim 1 , wherein when a first bit cell adjacent to a second bit cell of the plurality of bit cells is reset, a third bit cell other than the first and second bit cells is set concurrently.
3. The RRAM device of claim 1 , further comprising:
a plurality of angled active lines, arranged to intersect with the plurality of bit lines and the plurality of source lines, wherein the plurality of bit cells are formed at first intersections of the plurality of angled active lines and the plurality of bit lines; and
a plurality of source line connections, disposed at second intersections of the plurality of angled active lines and the plurality of source lines.
4. The RRAM device of claim 3 , wherein the plurality of word lines are substantially perpendicular to the plurality of angled active lines.
5. The RRAM device of claim 1 , wherein the plurality of word lines are substantially perpendicular to the plurality of bit lines and the plurality of source lines.
6. A method of forming a RRAM device, comprising:
providing a plurality of bit cells, each including a transistor and resistive element, wherein for each cell, the transistor includes a gate, a source and a drain, and the resistive element is coupled to the drain of the transistor;
providing a plurality of word lines, arranged in parallel to one another, and coupled to respective gates of the transistors;
providing a plurality of bit lines, arranged in parallel to one another and being intersected with the plurality of word lines, and coupled to respective drains of the transistors through the resistive elements; and
providing a plurality of source lines, arranged in parallel to one another and the plurality of bit lines;
wherein each source line is coupled to respective sources of the transistors of two adjacent bit cells of the plurality of bit cells;
wherein the method further comprises, when a first bit cell adjacent to a second bit cell of the plurality of bit cells is reset, pre-charging only a second bit line connected to a second drain of the transistor of the second bit cell to a “HIGH” voltage.
7. The method of claim 6 , further comprising:
resetting a first bit cell adjacent to a second bit cell of the plurality of bit cells and setting a third bit cell other than the first and second bit cells concurrently.
8. The method of claim 6 , further comprising:
providing a plurality of angled active lines, arranged to intersect with the plurality of bit lines and the plurality of source lines,
forming the plurality of bit cells at first intersections of the plurality of angled active lines and the plurality of bit lines; and
forming a plurality of source line connections at second intersections of the plurality of angled active lines and the plurality of source lines.
9. The method of claim 8 , wherein the plurality of word lines are substantially perpendicular to the plurality of angled active lines.
10. The method of claim 6 , wherein the plurality of word lines are substantially perpendicular to the plurality of bit lines and the plurality of source lines.