Synthesis of micro-sized interconnected Si-C composites
Embodiments provide a method of producing micro-sized Si—C composites or doped Si—C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO x (0<x<2) to a silicon framework by calcination, followed by etching and then by carbon filling by thermal deposition of gas containing organic molecules that have carbon atoms.
1. A method for synthesis of interconnected Si—C Nano composites, comprising:
mixing a dopant precursor with SiOx (0<x<2);
calcining the mixture of the SiOx and the dopant precursor to form a doped nanostructure comprising nanocrystalline silicon, dopant and amorphous silicon dioxide;
subjecting the doped nanostructure to hydrofluoric acid etching to form a porous doped silicon nanostructure;
depositing carbon on the porous doped silicon nanostructure by thermal decomposition of gas, wherein said gas comprises organic molecules having carbon atoms, thereby forming an interconnected doped Si—C nanocomposite.
2. The method of claim 1 , wherein said gas is one or members selected from the group consisting of methane, ethane, propane, butane, pentane, hexane, ethylene, propylene, butylene, and acetylene.
3. The method of claim 1 , wherein said dopant precursor is selected from the group consisting of B 2 O 3 and P 2 O 5 .
4. The method of claim 1 , further comprising forming a silicon alloy component of the doped Si—C nanocomposite by including an alloy precursor in the mixture of SiOx and dopant precursor prior to the calcining step.
5. The method of claim 4 , wherein said alloy precursor is germanium oxide.
6. The method of claim 1 , wherein said SiOx (0<x<2) is selected from the group consisting of amorphous SiOx and crystalline SiOx.
7. The method of claim 1 wherein the calcining step is conducted in a horizontal quartz or alumina tube.
8. The method of claim 1 , wherein the calcining step is preceded by a step comprising introducing high-purity Ar or N2 the same vessel as the SiOx at a flow rate of 1500 sccm for about 20 minutes.
9. The method of claim 8 further comprising reducing the flow rate to 100 sccm and heating the SiOx to a temperature from 900 to 1150° C. by increasing the temperature at a rate of about 10° C./min, then maintaining the maximum temperature for a duration between 2 to 24 hours.
10. The method of claim 1 wherein the hydrofluoric acid is about 48 wt % hydrofluoric acid.
11. The method of claim 1 , wherein the etching is conducted by immersing the doped nanostructure comprising silicon, dopant, and silicon dioxide in the hydrofluoric acid for about 3 hours.
12. The method of claim 11 further comprising washing the porous silicon nanostructure with distilled water and absolute ethanol several times in sequence.
13. The method of claim 1 wherein the step of depositing carbon on the porous silicon nanostructure is performed at between about 500 to 900° C.
14. The method of claim 1 wherein NaOH is not included in the calcining step.
15. The method of claim 1 wherein acetic acid is not included in the etching step.