Solid-state imaging device, method of manufacturing a solid-state imaging device, and electronic apparatus
Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.
1. An imaging device, comprising:
a plurality of pixels arranged in a matrix pattern, each of the pixels having a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate;
a plurality of on-chip lenses arranged for every other pixel in the matrix pattern, the on-chip lenses being larger in size than the pixels; and
a plurality of color filters, wherein
each color filter at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side, and wherein the pixels where the on-chip lenses are present alternate with the pixels where the on-chin lenses are absent.
2. The imaging device according to claim 1 , wherein
a film thickness at a peripheral portion of each of the color filters at the pixels where the on-chip lenses are absent is larger than a film thickness at a central portion thereof.
3. The imaging device according to claim 1 , wherein
each of the color filters at the pixels where the on-chip lenses are absent is formed on a transparent film made of a material having high transparency.
4. The imaging device according to claim 3 , wherein
the transparent film has a trapezoidal cross section.
5. The imaging device according to claim 1 , wherein
each of the color filters at the pixels where the on-chip lenses are present has a trapezoidal cross section.
6. The imaging device according to claim 1 , further comprising:
a plurality of light-shielding walls each having a triangular cross section, the light shielding walls being arranged at positions adjacent to the color filters at the pixels where the on-chip lenses are present.
7. The imaging device according to claim 6 , wherein
each of the light-shielding walls is made of one of a low refractive index material having a lower refractive index than the color filters and a metal material.
8. The imaging device according to claim 1 , wherein
each of the color filters at the pixels where the on-chip lenses are absent has a rectangular cross section.
9. The imaging device according to claim 1 , wherein
the lower side is the same in width as the pixels.
10. The imaging device according to claim 1 , wherein
each of the color filters is formed on a flattened film.
11. The imaging device according to claim 1 , further comprising
a plurality of inter-pixel light-shielding films arranged at pixel boundary portions at an interface on the rear surface side of the semiconductor substrate.
12. The imaging device according to claim 6 , further comprising
a plurality of light-shielding portions embedded between the adjacent photoelectric conversion portions with a desired depth from the rear surface side of the semiconductor substrate.
13. The imaging device according to claim 12 , wherein
the light-shielding walls and the light-shielding portions are connected to each other at an interface on the rear surface side of the semiconductor substrate.
14. The imaging device according to claim 12 , wherein
the light-shielding walls and the light-shielding portions are made of a same material.
15. The imaging device according to claim 12 , wherein
both side walls of the light-shielding walls held between the color filters are slant surfaces.
16. The imaging device according to claim 12 , wherein
the light-shielding walls are the same in height as the color filters.
17. The imaging device according to claim 12 , wherein
the light-shielding walls are lower in height than the color filters.
18. The imaging device according to claim 12 , wherein
each of the light-shielding walls has a trapezoidal cross section.
19. A method of manufacturing an imaging device including a plurality of pixels arranged in a matrix pattern, each of the pixels having a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate and a plurality of on-chip lenses arranged for every other pixel, the on-chip lenses being larger in size than the pixels, the method comprising:
forming a plurality of color filters, wherein the color filters at the pixels where the on-chip lenses are present are formed with a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side, and wherein the pixels where the on-chip lenses are present alternate with the pixels where the on-chip lenses are absent.
20. An electronic apparatus, comprising:
an imaging device including:
a plurality of pixels arranged in a matrix pattern, each of the pixels having a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate;
a plurality of on-chip lenses arranged for every other pixel in the matrix pattern, the on-chip lenses being larger in size than the pixels; and
a plurality of color filters, wherein
each color filter at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side, and wherein the pixels where the on-chip lenses are present alternate with the pixels where the on-chip lenses are absent.