IP Library › Granted Patent US 9,276,130
Granted Patent B2
US 9,276,130 · App. 14/556,371 · Granted Mar 1, 2016

Semiconductor device

Inventor: Shunpei Yamazaki (Setagaya, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L29/7869H01L29/267H01L29/512H01L29/518H01L29/78693H01L29/78696
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Quick Facts
Patent No.
US 9,276,130
App. No.
14/556,371
Granted
Mar 1, 2016
Kind
B2
Abstract

High field-effect mobility is provided for a transistor including an oxide semiconductor. Further, a highly reliable semiconductor device including the transistor is provided. In a bottom-gate transistor including an oxide semiconductor layer, an oxide semiconductor layer functioning as a current path (channel) of the transistor is sandwiched between oxide semiconductor layers having lower carrier densities than the oxide semiconductor layer. In such a structure, the channel is formed away from the interface of the oxide semiconductor stacked layer with an insulating layer in contact with the oxide semiconductor stacked layer, i.e., a buried channel is formed.

Claims (61)

1. A semiconductor device comprising:

a first oxide semiconductor film;

a second oxide semiconductor film on and in contact with the first oxide semiconductor film;

a third oxide semiconductor film on and in contact with the second oxide semiconductor film;

a first oxide insulating film and a second oxide insulating film between which the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film are positioned;

a gate electrode overlapping with the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film with the first oxide insulating film interposed therebetween;

a source electrode and a drain electrode each electrically connected to at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film,

wherein the second oxide semiconductor film has a difference between a Fermi level and a bottom of a conduction band smaller than the first oxide semiconductor film and the third oxide semiconductor film.

2. The semiconductor device according to claim 1 , wherein the second oxide semiconductor film comprises an impurity imparting an n-type conductivity.

3. The semiconductor device according to claim 2 , wherein the impurity is at least any one of boron, nitrogen, and phosphorus.

4. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor film and the third oxide semiconductor film is an i-type oxide semiconductor film.

5. The semiconductor device according to claim 1 , wherein the second oxide semiconductor film has a carrier density higher than the first oxide semiconductor film and the third oxide semiconductor film.

6. The semiconductor device according to claim 1 , wherein the bottom of the conduction band of the second oxide semiconductor film is lower than those of the first oxide semiconductor film and the third oxide semiconductor film.

7. The semiconductor device according to claim 1 , wherein each of the first oxide insulating film and the second oxide insulating film is a silicon oxide film.

8. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises indium, gallium, and zinc.

9. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film is positioned over the gate electrode.

10. The semiconductor device according to claim 1 , wherein each of the source electrode and the drain electrode is on and in contact with the third oxide semiconductor film.

11. A semiconductor device comprising:

a first oxide semiconductor film;

a second oxide semiconductor film on and in contact with the first oxide semiconductor film;

a third oxide semiconductor film on and in contact with the second oxide semiconductor film;

a first oxide insulating film and a second oxide insulating film between which the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film are positioned;

a first nitride insulating film and a second nitride insulating film between which the first oxide insulating film, the first oxide semiconductor film, the second oxide semiconductor film, the third oxide semiconductor film and the second oxide insulating film are positioned;

a gate electrode overlapping with the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film with the first oxide insulating film and the first nitride insulating film interposed therebetween;

a source electrode and a drain electrode each electrically connected to at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film,

wherein the second oxide semiconductor film has a difference between a Fermi level and a bottom of a conduction band smaller than the first oxide semiconductor film and the third oxide semiconductor film.

12. The semiconductor device according to claim 11 , wherein the second oxide semiconductor film comprises an impurity imparting an n-type conductivity.

13. The semiconductor device according to claim 12 , wherein the impurity is at least any one of boron, nitrogen, and phosphorus.

14. The semiconductor device according to claim 11 , wherein each of the first oxide semiconductor film and the third oxide semiconductor film is an i-type oxide semiconductor film.

15. The semiconductor device according to claim 11 , wherein the second oxide semiconductor film has a carrier density higher than the first oxide semiconductor film and the third oxide semiconductor film.

16. The semiconductor device according to claim 11 , wherein the bottom of the conduction band of the second oxide semiconductor film is lower than those of the first oxide semiconductor film and the third oxide semiconductor film.

17. The semiconductor device according to claim 11 , wherein each of the first oxide insulating film and the second oxide insulating film is a silicon oxide film.

18. The semiconductor device according to claim 11 , wherein each of the first nitride insulating film and the second nitride insulating film is a silicon nitride film.

19. The semiconductor device according to claim 11 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises indium, gallium, and zinc.

20. The semiconductor device according to claim 11 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film is positioned over the gate electrode.

21. The semiconductor device according to claim 11 , wherein each of the source electrode and the drain electrode is on and in contact with the third oxide semiconductor film.

22. A semiconductor device comprising:

a gate electrode:

a first gate insulating film over the gate electrode;

a second gate insulating film over the first gate insulating film;

a first oxide semiconductor film on and in contact with the second gate insulating film;

a second oxide semiconductor film on and in contact with the first oxide semiconductor film;

a third oxide semiconductor film on and in contact with the second oxide semiconductor film;

a source electrode and a drain electrode on and in contact with a top surface of the third oxide semiconductor film and in contact with side surfaces of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film;

an oxide insulating film on and in contact with the third oxide semiconductor film, the source electrode, and the drain electrode; and

a nitride insulating film over the oxide insulating film,

wherein the second oxide semiconductor film has a difference between a Fermi level and a bottom of a conduction band smaller than the first oxide semiconductor film and the third oxide semiconductor film.

23. The semiconductor device according to claim 22 , wherein the second oxide semiconductor film comprises an impurity imparting an n-type conductivity.

24. The semiconductor device according to claim 23 , wherein the impurity is at least any one of boron, nitrogen, and phosphorus.

25. The semiconductor device according to claim 22 , wherein each of the first oxide semiconductor film and the third oxide semiconductor film is an i-type oxide semiconductor film.

26. The semiconductor device according to claim 22 , wherein the second oxide semiconductor film has a carrier density higher than the first oxide semiconductor film and the third oxide semiconductor film.

27. The semiconductor device according to claim 22 , wherein the bottom of the conduction band of the second oxide semiconductor film is lower than those of the first oxide semiconductor film and the third oxide semiconductor film.

28. The semiconductor device according to claim 22 , wherein each of the second gate insulating film and the oxide insulating film is a silicon oxide film.

29. The semiconductor device according to claim 22 , wherein each of the first gate insulating film and the nitride insulating film is a silicon nitride film.

30. The semiconductor device according to claim 22 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises indium, gallium, and zinc.

31. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises a crystal part.

32. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film is a c-axis aligned crystalline oxide semiconductor (CAAC-OS) film.

33. The semiconductor device according to claim 11 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises a crystal part.

34. The semiconductor device according to claim 11 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film is a c-axis aligned crystalline oxide semiconductor (CAAC-OS) film.

35. The semiconductor device according to claim 22 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises a crystal part.

36. The semiconductor device according to claim 22 , wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film is a c-axis aligned crystalline oxide semiconductor (CAAC-OS) film.

Priority Claims (1)
JP 2012-136437 · Jun 15, 2012 · national
Continuity (2)
Continuation 13914156 · Jun 10, 2013
Related Publication 20150187949A1 · Jul 2, 2015