Method for measuring film thickness distribution
A method for measuring film thickness distribution, including calculating profile P 1 indicating wavelength dependence of a reflectance of a first wafer being an object measured with respect to a light at wavelengths not less than a wavelength region of visible light; calculating profile P 21 indicating wavelength dependence of a reflectance of a second wafer to light at wavelengths not less than wavelength region of visible light; obtaining a wavelength λ 1 observed when profile P 31 of a difference between calculated profiles P 1 and P 21 becomes zero; and selecting waveband including the obtained wavelength λ 1 as a waveband of light for use in film thickness distribution measurement by reflection spectroscopy. The film thickness distribution of the first thin film is measured by reflection spectroscopy in a manner that a surface of the first wafer is irradiated with a light to selectively measure only reflected light at a selected waveband.
1. A method for measuring a film thickness distribution of a first thin film of a first wafer with thin films by reflection spectroscopy, the first wafer having the first thin film formed on a surface of a substrate and a second thin film formed on a surface of the first thin film, the method comprising:
calculating a profile P 1 by a simulation, the profile P 1 indicating wavelength dependence of a reflectance of the first wafer with respect to a light at wavelengths not less than a wavelength region of visible light, the first wafer being an object to be measured;
calculating a profile P 21 by a simulation, the profile P 21 indicating wavelength dependence of a reflectance of a second wafer with respect to a light at wavelengths not less than a wavelength region of visible light, the second wafer having thin films including a second thin film that is t [nm] thinner or thicker than a set film thickness T 2 of the second thin film of the first wafer;
calculating a profile P 31 (=P 21 −P 1 ) of a difference between the calculated profiles P 1 and P 21 and obtaining a wavelength λ 1 observed when the calculated profile P 31 of the difference becomes zero;
selecting a waveband including the obtained wavelength λ 1 as a waveband of a light for use in the film thickness distribution measurement by the reflection, spectroscopy; and
measuring the film thickness distribution of the first thin film by reflection spectroscopy, wherein a surface of the first wafer is irradiated with a light to selectively measure only reflected light at the selected waveband of reflected light from the surface of the first wafer, or wherein the surface of the first wafer is irradiated with a light at the selected waveband to measure all reflected lights of the reflected light from the surface of the first wafer.
2. The method for measuring a film thickness distribution according to claim 1 , wherein
the waveband including the obtained wavelength λ 1 is selected from a range of a wavelength λ 1 plus or minus 50 [nm].
3. A method for measuring a film thickness distribution of a second thin film of a first wafer with thin films by reflection spectroscopy, the first wafer having a first thin film formed on a surface of a substrate and the second thin film formed on a surface of the first thin film, the method comprising:
calculating a profile P 1 by a simulation, the profile P 1 indicating wavelength dependence of a reflectance of the first wafer with respect to a light at wavelengths not less than a wavelength region of visible light, the first wafer being an object to be measured;
calculating a profile P 22 by a simulation, the profile P 22 indicating wavelength dependence of a reflectance of a second wafer with respect to a light at wavelengths not less than a wavelength region of visible light, the second wafer having thin films including a first thin film that is t [nm] thinner or thicker than a set film thickness T 1 of the first thin film of the first wafer;
calculating a profile P 32 (=P 22 −P 1 ) of a difference between the calculated profiles P 1 and P 22 and obtaining a wavelength λ 2 observed when the calculated profile P 32 of the difference becomes zero;
selecting a waveband including the obtained wavelength λ 2 as a waveband of a light for use in the film thickness distribution measurement by the reflection, spectroscopy, and
measuring the film thickness distribution of the first thin film by reflection, spectroscopy wherein a surface of the first wafer is irradiated with a light to selectively measure only reflected light at the selected waveband of reflected light from the surface of the first wafer, or wherein the surface of the first wafer is irradiated with a light at the selected waveband to measure all reflected lights of the reflected light from the surface of the first wafer.
4. The method for measuring a film thickness distribution according to claim 3 , wherein
the waveband including the obtained wavelength λ 2 is selected from a range of a wavelength λ 2 plus or minus 50 [nm].
5. A method for measuring film thickness distributions of a first thin film and a second thin film of a first wafer with thin films by reflection spectroscopy, the first wafer having the first thin film formed on a surface of a substrate and the second thin film formed on a surface of the first thin film, the method comprising:
calculating a profile P 1 by a simulation, the profile P 1 indicating wavelength dependence of a reflectance of the first wafer with respect to a light at wavelengths not less than a wavelength region of visible light, the first wafer being an object to be measured;
calculating a profile P 21 by a simulation, the profile P 21 indicating wavelength dependence of a reflectance of a second wafer with respect to a light at wavelengths not less than a wavelength region of visible light, the second wafer having thin films including a second thin film that is t [nm] thinner or thicker than a set film thickness T 2 of the second thin film of the first wafer;
calculating a profile P 31 (=P 21 −P 1 ) of a difference between the calculated profiles P 1 and P 21 and obtaining a wavelength λ 1 observed when the calculated profile P 31 of the difference becomes zero;
calculating a profile P 22 by a simulation, the profile P 22 indicating wavelength dependence of a reflectance of a third wafer with respect to a light at wavelengths not less than a wavelength region of visible light, the third wafer having thin films including a first thin film that is t [nm] thinner or thicker than a set film thickness T 1 of the first thin film of the first wafer;
calculating a profile P 32 (=P 22 −P 1 ) of a difference between the calculated profiles P 1 and P 22 and obtaining a wavelength λ 2 observed when the calculated profile P 32 of the difference becomes zero;
selecting a waveband including the obtained wavelengths λ 1 and λ 2 as a waveband of a light for use in the film thickness distribution measurement by the reflection spectroscopy; and
measuring the film thickness distribution of the first thin film and the second thin film by reflection spectroscopy, wherein a surface of the first wafer is irradiated with a light to selectively measure only reflected light at the selected waveband of reflected light from the surface of the first wafer, or wherein the surface of the first wafer is irradiated with a light at the selected waveband to measure all reflected lights of the reflected light from the surface of the first wafer.
6. The method for measuring film thickness distributions according to claim 5 , wherein
the waveband including the obtained wavelengths λ 1 and λ 2 is selected, if λ 1 <λ 2 , from a range of a wavelength λ 1 minus 50 [nm] to a wavelength λ 2 plus 50 [nm] and the waveband is selected, if λ 1 >λ 2 , from a range of a wavelength λ 2 minus 50 [nm] to a wavelength λ 1 plus 50 [nm].
7. The method for measuring film thickness distributions according to claim 1 , wherein
the first wafer is an SOI wafer, the first thin film is a buried oxide film, and the second thin film is an SOI layer composed of silicon single crystal.
8. The method for measuring film thickness distributions according to claim 2 , wherein
the first wafer is an SOT wafer, the first thin film is a buried oxide film, and the second thin film is an SOI layer composed of silicon single crystal.
9. The method for measuring film thickness distributions according to claim 3 , wherein
the first wafer is an SOI wafer, the first thin film is a buried oxide film, and the second thin film is an SOI layer composed of silicon single crystal.
10. The method for measuring film thickness distributions according to claim 4 , wherein
the first wafer is an SOI wafer, the first thin film is a buried oxide film, and the second thin film is an SOI layer composed of silicon single crystal.
11. The method for measuring film thickness distributions according to claim 5 , wherein
the first wafer is an SOI wafer, the first thin film is a buried oxide film, and the second thin film is an SOI layer composed of silicon single crystal.
12. The method for measuring film thickness distributions according to claim 6 , wherein
the first wafer is an SOI wafer, the first thin film is a buried oxide film, and the second thin film is an SOI layer composed of silicon single crystal.