Mask blank and photomask
The present invention is to provide a mask blank enabling fabrication of a photomask having a structure where electrostatic breakdown is effectively prevented. To accomplish the object, the invention discloses a mask blank comprising a mask substrate, an electrostatic breakdown prevention film fully covering one side of the mask substrate, and a shading film formed on the electrostatic breakdown prevention film. The electrostatic breakdown prevention film is made of titanium, tantalum, titanium compound or tantalum compound. The transparent rate of the electrostatic breakdown prevention film is not less than 75%, for the wavelength of light in an exposure. The sheet resistance of the electrostatic discharge prevention film is not more than 100KΩ/□.
1. A mask blank comprising
a mask substrate,
an electrostatic breakdown prevention film fully covering a front side of the mask substrate, and
a shading film formed on the electrostatic breakdown prevention film at the front side of the mask substrate,
wherein
the electrostatic breakdown prevention film is made of titanium compound or tantalum compound,
the thickness of the electrostatic breakdown prevention film is in the range of 1.5 to 3.5 nm,
the light transparent rate of the electrostatic breakdown prevention film is not less than 75% for the wavelength of light in an exposure, and
the sheet resistance of the electrostatic breakdown prevention film is not more than 100KΩ/□.
2. A mask blank as claimed in claim 1 ,
wherein
the electrostatic breakdown prevention film is the film formed by sputter deposition using argon with oxygen added.
3. A mask blank as claimed in claim 2 ,
wherein
the addition proportion of oxygen to argon is in the range of 5 to 20%.
4. A mask blank as claimed in claim 1 ,
wherein
the electrostatic breakdown prevention film is the film formed by sputter deposition using argon with oxygen and nitrogen added.
5. A mask blank as claimed in claim 4 ,
wherein
the addition proportion of oxygen to argon is in the range of 10 to 20%, and
the addition proportion of nitrogen to argon is in the range of 5 to 15%.
6. A mask blank as claimed in claim 1 ,
wherein
the electrostatic breakdown prevention film is the film formed by sputter deposition argon with carbon dioxide and nitrogen added.
7. A mask blank as claimed in claim 6 ,
wherein
the addition proportion of carbon dioxide to argon is in the range of 10 to 20%, and
the addition proportion of nitrogen to argon is in the range of 5 to 15%.
8. A photomask comprising
a mask substrate,
an electrostatic breakdown prevention film fully covering a front side of the mask substrate, and
a shading film formed and patterned on the electrostatic breakdown prevention film at the front side of the mask substrate,
wherein
the electrostatic breakdown prevention film is made of titanium compound or tantalum compound,
the thickness of the electrostatic breakdown prevention film is in the range of 1.5 to 3.5 nm,
the light transparent rate of the electrostatic breakdown prevention film is not less than 75% for the wavelength of light in an exposure, and
the sheet resistance of the electrostatic breakdown prevention film is not more than 100KΩ/□.
9. A photomask as claimed in claim 8 ,
wherein
the electrostatic breakdown prevention film is the film formed by sputter deposition using argon with oxygen added.
10. A photomask as claimed in claim 6 ,
wherein
the addition proportion of oxygen to argon is in the range of 5 to 20%.
11. A photomask as claimed in claim 8 ,
wherein
the electrostatic breakdown prevention film is the film formed by sputter deposition using argon with oxygen and nitrogen added.
12. A photomask as claimed in claim 11 ,
wherein
the addition proportion of oxygen to argon is in the range of 10 to 20%, and
the addition proportion of nitrogen to argon is in the range of 5 to 15%.
13. A photomask as claimed in claim 8 ,
wherein
the electrostatic breakdown prevention film is the film formed by sputter depositing argon with carbon dioxide and nitrogen added.
14. A photomask as claimed in claim 13 ,
wherein
the addition proportion of carbon dioxide to argon is in the range of 10 to 20%, and
the addition proportion of nitrogen to argon is in the range of 5 to 15%.