High voltage durability III-nitride device
A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body characterized by a majority charge carrier conductivity type, formed over the second silicon body. The second silicon body has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate including a <100> silicon layer, an insulator layer over the <100> silicon layer, and a P type conductivity <111> silicon layer over the insulator layer. The high voltage durability HEMT also comprises a III-nitride semiconductor body formed over the P type conductivity <111> silicon layer, the III-nitride semiconductor body forming a heterojunction of the HEMT.
1. A high voltage durability III-Nitride semiconductor device comprising:
a P-type silicon body formed over an insulator body, said insulator body formed over an N-type silicon body or over another P-type silicon body;
an N-type channel formed within a III-Nitride semiconductor body, said III-Nitride semiconductor body formed over said P-type silicon body;
power electrodes formed over said III-Nitride semiconductor body, and a gate situated between said power electrodes;
wherein said P-type silicon body increases a breakdown voltage of said high voltage durability III-Nitride transistor.
2. The high voltage durability III-Nitride semiconductor device of claim 1 further comprising a silicon semiconductor device formed on said P-type silicon body.
3. The high voltage durability III-Nitride semiconductor device of claim 2 , wherein said silicon semiconductor device comprises a metal-oxide-semiconductor field-effect transistor (MOSFET).
4. The high voltage durability III-Nitride semiconductor device of claim 1 further comprising a plurality of silicon semiconductor devices formed on said P-type silicon body.
5. The high voltage durability III-Nitride semiconductor device of claim 4 , wherein said plurality of silicon semiconductor devices comprises a plurality of metal-oxide-semiconductor field-effect transistors (MOSFETs).
6. The high voltage durability III-Nitride semiconductor device of claim 1 , wherein said III-Nitride semiconductor body comprises an n-channel metal-oxide-semiconductor field-effect transistor (NMOS) device.
7. The high voltage durability III-Nitride semiconductor device of claim 1 , wherein said III-Nitride semiconductor body comprises a plurality of n-channel metal-oxide-semiconductor field-effect transistor (NMOS) devices.
8. A high voltage durability III-nitride semiconductor device comprising:
a support substrate including a first doped silicon body, an insulator body over said first doped silicon body, and a second doped silicon body over said insulator body;
a III-nitride semiconductor body formed over said second silicon body;
an N-type channel formed within a III-Nitride semiconductor body;
power electrodes formed over said III-Nitride semiconductor body, and a gate situated between said power electrodes;
wherein said support substrate increases a breakdown voltage of said high voltage durability III-Nitride transistor.
9. The high voltage durability III-nitride semiconductor device of claim 8 further comprising a silicon semiconductor device formed in said support substrate.
10. The high voltage durability III-nitride semiconductor device of claim 8 further comprising a silicon semiconductor device formed on said first doped silicon body.
11. The high voltage durability III-Nitride semiconductor device of claim 10 , wherein said silicon semiconductor device comprises a metal-oxide-semiconductor field-effect transistor (MOSFET).
12. The high voltage durability III-Nitride semiconductor device of claim 8 further comprising a plurality of silicon semiconductor devices formed in said support substrate.
13. The high voltage durability III-Nitride semiconductor device of claim 8 further comprising a plurality of silicon semiconductor devices formed on said first doped silicon body.
14. The high voltage durability III-Nitride semiconductor device of claim 13 , wherein said plurality of silicon semiconductor devices comprises a plurality of metal-oxide-semiconductor field-effect transistors (MOSFETs).
15. The high voltage durability III-Nitride semiconductor device of claim 8 , wherein said III-Nitride semiconductor body comprises an n-channel metal-oxide-semiconductor field-effect transistor (NMOS) device.
16. The high voltage durability III-Nitride semiconductor device of claim 8 , wherein said III-Nitride semiconductor body comprises a plurality of n-channel metal-oxide-semiconductor field-effect transistor (NMOS) devices.