Semiconductor device having a switch that expands and contracts by temperature change
A semiconductor device includes: a first semiconductor-chip including a first electrode; a second semiconductor-chip including a second electrode; and a switch including a core element configured to contract and expand by a temperature change, a heat generation unit configured to heat the core element, a first metal element configured to cover the core element and connected to the first electrode, and a second metal element configured to cover the core element and connected to the second electrode, wherein, when the core element contracts, the first metal element and the second metal element come in contact with each other so that the first semiconductor-chip and the second semiconductor-chip are electrically connected with each other, and when the core element expands, the first metal element and the second metal element become in non-contact with each other so that the first semiconductor-chip and the second semiconductor-chip are electrically separated from each other.
1. A semiconductor device comprising:
a first semiconductor chip including a first electrode;
a second semiconductor chip including a second electrode; and
a switch including a core element configured to contract and expand by a temperature change, a heat generation unit configured to heat the core element, a first metal element configured to cover the core element and connected to the first electrode, and a second metal element configured to cover the core element and connected to the second electrode,
wherein, when the core element contracts, the first metal element and the second metal element come in contact with each other so that the first semiconductor chip and the second semiconductor chip are electrically connected with each other, and
when the core element expands, the first metal element and the second metal element become in non-contact with each other so that the first semiconductor chip and the second semiconductor chip are electrically separated from each other.
2. The semiconductor device according to claim 1 , wherein the first semiconductor chip includes a plurality of first electrodes, and a plurality of first oxide films formed on side surfaces of the plurality of first electrodes, respectively,
the second semiconductor chip includes a plurality of second electrodes and a plurality of second oxide films formed on side surfaces of the plurality of second electrodes, respectively,
a plurality of switches is provided,
film thicknesses of the first oxide films are different from each other,
film thicknesses of the second oxide films are different from each other, and
the first semiconductor chip and the second semiconductor chip are electrically connected with each other through any one of the plurality of switches.
3. The semiconductor device according to claim 1 , wherein the core element expands when its temperature is raised, and contracts when its temperature drops.
4. The semiconductor device according to claim 1 , wherein the core element contracts when its temperature is raised, and expands when its temperature drops.
5. The semiconductor device according to claim 1 , wherein after the core element expands by the temperature change, the core element does not return to its original shape by a temperature change.
6. The semiconductor device according to claim 1 , wherein after the core element contracts by the temperature change, the core element does not return to its original shape by a temperature change.