Light-emitting device comprising light-emitting elements having different optical path lengths
View Patent ↗A light-emitting device and a lighting device each of which includes a plurality of light-emitting elements exhibiting light with different wavelengths are provided. The light-emitting device and the lighting device each have an element structure in which each of the light-emitting elements emits only light with a desired wavelength, and thus the light-emitting elements have favorable color purity. In the light-emitting element emitting light (λ R ) with the longest wavelength of the light with different wavelengths, the optical path length from a reflective electrode to a light-emitting layer (a light-emitting region) included in an EL layer is set to λ R /4 and the optical path length from the reflective electrode to a semi-transmissive and semi-reflective electrode is set to λ R /2.
1. A light-emitting device comprising:
a first light-emitting element including a first reflective electrode, a first transparent conductive layer being in contact with the first reflective electrode, an EL layer being in contact with the first transparent conductive layer, and a semi-transmissive and semi-reflective electrode being in contact with the EL layer; and
a second light-emitting element including a second reflective electrode, the EL layer being in contact with the second reflective electrode, and the semi-transmissive and semi-reflective electrode in contact with the EL layer;
wherein the EL layer includes a first light-emitting layer emitting light with a wavelength λ Y , and a second light-emitting layer emitting light with a wavelength λ B ,
wherein, in the first light-emitting element, an optical path length from the first reflective electrode to the first light-emitting layer is 3λ B /4 and an optical path length from the first reflective electrode to the semi-transmissive and semi-reflective electrode is λ B , and
wherein, in the second light-emitting element, an optical path length from the second reflective electrode to the second light-emitting layer is λ R /4 and an optical path length from the second reflective electrode to the semi-transmissive and semi-reflective electrode is λ R /2, where a wavelength relation of λ R >λ Y >λ B is satisfied.
2. The light-emitting device according to claim 1 ,
wherein the EL layer includes one or more of a hole-injection layer, a hole-transport layer, an electron-transport layer, and an electron-injection layer.
3. The light-emitting device according to claim 1 ,
wherein light emitted from the first light-emitting element and light emitted from the second light-emitting element have wavelengths different from each other.
4. The light-emitting device according to claim 1 ,
wherein the first and second reflective electrodes are formed using a same material.
5. An electronic appliance comprising the light-emitting device according to claim 1 .
6. A lighting device comprising the light-emitting device according to claim 1 .
7. A light-emitting device comprising:
a first light-emitting element including a first reflective electrode, a first transparent conductive layer being in contact with the first reflective electrode, an EL layer being in contact with the first transparent conductive layer, and a semi-transmissive and semi-reflective electrode being in contact with the EL layer;
a second light-emitting element including a second reflective electrode, a second transparent conductive layer being in contact with the second reflective electrode, the EL layer being in contact with the second transparent conductive layer, and the semi-transmissive and semi-reflective electrode being in contact with the EL layer; and
a third light-emitting element including a third reflective electrode, the EL layer being in contact with the third reflective electrode, and the semi-transmissive and semi-reflective electrode being in contact with the EL layer,
wherein the EL layer includes a first light-emitting layer emitting light with a wavelength λ Y and a second light-emitting layer emitting light with a wavelength λ B ,
wherein, in the first light-emitting element, an optical path length from the first reflective electrode to the first light-emitting layer is 3λ G /4 and an optical path length from the first reflective electrode to the semi-transmissive and semi-reflective electrode is λ G ,
wherein, in the second light-emitting element, an optical path length from the second reflective electrode to the second light-emitting layer is 3λ B /4 and an optical path length from the second reflective electrode to the semi-transmissive and semi-reflective electrode is λ B , and
wherein, in the third light-emitting element, an optical path length from the third reflective electrode to the first light-emitting layer is λ R /4 and an optical path length from the third reflective electrode to the semi-transmissive and semi-reflective electrode is λ R /2, where a wavelength relation of λ R >λ Y >λ G >λ B is satisfied.
8. The light-emitting device according to claim 7 ,
wherein the EL layer includes one or more of a hole-injection layer, a hole-transport layer, an electron-transport layer, and an electron-injection layer.
9. The light-emitting device according to claim 7 ,
wherein the first transparent conductive layer is thicker than the second transparent conductive layer.
10. The light-emitting device according to claim 7 ,
wherein light emitted from the first light-emitting element, light emitted from the second light-emitting element, and light emitted from the third light-emitting element have wavelengths different from each other.
11. The light-emitting device according to claim 7 ,
wherein the first, second and third reflective electrodes are formed using a same material.
12. An electronic appliance comprising the light-emitting device according to claim 7 .
13. A lighting device comprising the light-emitting device according to claim 7 .
14. A light-emitting device comprising:
a first light-emitting element including a first reflective electrode, a first transparent conductive layer being in contact with the first reflective electrode, an EL layer being in contact with the first transparent conductive layer, and a semi-transmissive and semi-reflective electrode being in contact with the EL layer; and
a second light-emitting element including a second reflective electrode, the EL layer being in contact with the second reflective electrode, and the semi-transmissive and semi-reflective electrode being in contact with the EL layer,
wherein the EL layer includes a first light-emitting layer emitting light with a wavelength λ Y and a second light-emitting layer emitting light with a wavelength λ B ,
wherein, in the first light-emitting element, an optical path length from the first reflective electrode to the first light-emitting layer is 3λ G /4 and an optical path length from the first reflective electrode to the semi-transmissive and semi-reflective electrode is λ G , and
wherein, in the second light-emitting element, an optical path length from the second reflective electrode to the second light-emitting layer is λ R /4 and an optical path length from the second reflective electrode to the semi-transmissive and semi-reflective electrode is λ R /2, where a wavelength relation of λ R >λ Y >λ G >λ B is satisfied.
15. The light-emitting device according to claim 14 , wherein the EL layer includes a hole-injection layer, which comprises a composite of an organic compound and a metal oxide.
16. An electronic appliance comprising the light-emitting device according to claim 14 .
17. A lighting device comprising the light-emitting device according to claim 14 .
18. The light-emitting device according to claim 1 ,
wherein the wavelength λ Y is from 550 nm to 570 nm,
wherein the wavelength λ G is from 500 nm to 550 nm, and
wherein the wavelength λ B is from 420 nm to 480 nm.
19. The light-emitting device according to claim 7 ,
wherein the wavelength λ R is from 600 nm to 760 nm,
wherein the wavelength λ Y is from 550 nm to 570 nm,
wherein the wavelength λ G is from 500 nm to 550 nm, and
wherein the wavelength λ B is from 420 nm to 480 nm.
20. The light-emitting device according to claim 14 ,
wherein the EL layer includes one or more of a hole-injection layer, a hole-transport layer, an electron-transport layer, and an electron-injection layer.
21. The light-emitting device according to claim 14 ,
wherein light emitted from the first light-emitting element and light emitted from the second light-emitting element have wavelengths different from each other.
22. The light-emitting device according to claim 14 ,
wherein the wavelength λ R is from 600 nm to 760 nm,
wherein the wavelength λ Y is from 550 nm to 570 nm,
wherein the wavelength λ G is from 500 nm to 550 nm, and
wherein the wavelength λ B is from 420 nm to 480 nm.