Manufacturing method of semiconductor device
A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over an oxide semiconductor film with a gate insulating film therebetween;
introducing argon into portions of the oxide semiconductor film by ion implantation or ion doping using at least the gate electrode layer as a mask;
forming a titanium nitride film over the gate electrode layer so as to contact the oxide semiconductor film; and
heating the titanium nitride film to form low-resistance regions in the oxide semiconductor film,
wherein the low-resistance regions contain argon and titanium.
2. The method according to claim 1 , wherein the argon is introduced into the portions of the oxide semiconductor film through the titanium nitride film.
3. The method according to claim 1 , wherein the oxide semiconductor film comprises indium.
4. The method according to claim 1 , wherein the oxide semiconductor film comprises indium, gallium and zinc.
5. The method according to claim 1 , wherein the argon is introduced by ion implantation.
6. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over an oxide semiconductor film with a gate insulating film therebetween;
introducing argon into portions of the oxide semiconductor film by ion implantation or ion doping using at least the gate electrode layer as a mask;
forming side wall insulators on side surfaces of the gate electrode layer;
forming a titanium nitride film over the gate electrode layer and the side wall insulators so as to contact the oxide semiconductor film; and
heating the titanium nitride film to form low-resistance regions in the oxide semiconductor film,
wherein the low-resistance regions contain argon and titanium.
7. The method according to claim 6 , wherein the argon is introduced into the portions of the oxide semiconductor film through the titanium nitride film.
8. The method according to claim 6 , wherein the oxide semiconductor film comprises indium.
9. The method according to claim 6 , wherein the oxide semiconductor film comprises indium, gallium and zinc.
10. The method according to claim 6 , wherein the argon is introduced before forming the side wall insulators.
11. The method according to claim 6 , wherein the argon is introduced after forming the side wall insulators.