Imaging device and electronic apparatus
A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
1. An imaging device comprising:
a plurality of pixels each of which includes:
a photoelectric conversion structure that generates charges by photoelectrically converting light; and
a transistor that transfers a pixel signal of a level corresponding to the charges generated in the photoelectric conversion structure,
wherein a phase difference pixel included in the plurality of pixels is configured in such a manner that the phase difference pixel is divided into a plurality of photoelectric conversion structures, wherein an insulated light shielding film is embedded in a region for separating, and wherein the insulated light shielding film is between the plurality of photoelectric conversion structures of the phase difference pixel.
2. The imaging device according to claim 1 ,
wherein the phase difference pixel is configured by further embedding the light shielding film in a region for separating the phase difference pixel and other adjacent pixels.
3. The imaging device according to claim 1 ,
wherein a white filter is disposed corresponding to the phase difference pixel, in a color filter layer laminated on a sensor layer in which the photoelectric conversion structure is formed.
4. The imaging device according to claim 1 ,
wherein the phase difference pixel includes two photoelectric conversion structures.
5. The imaging device according to claim 1 ,
wherein the phase difference pixel includes four photoelectric conversion structures.
6. The imaging device according to claim 1 , further comprising:
a charge detection structure that temporarily accumulates charges that are transferred from at least one of the photoelectric conversion structure and converts the charges into a voltage,
wherein charges from the photoelectric conversion structures of the phase detection pixel are simultaneously transferred to the charge detection structure, and the charges are added in the charge detection structure.
7. The imaging device according to claim 6 , further comprising:
a switching transistor that switches a conversion efficiency for converting charges into a voltage in the charge detection structure.
8. The imaging device according to claim 1 ,
wherein the positions in which the phase detection pixel is divided into a plurality of photoelectric conversion structures are corrected according to an arrangement position of the phase difference pixel.
9. The imaging device according to claim 1 ,
wherein a plurality of phase difference pixels are disposed entirely in a pixel array in which the pixels are disposed in an array shape.
10. The solid-state imaging device of claim 1 , wherein the photoelectric conversion structures are photodiodes.
11. An imaging device comprising:
a plurality of pixels each of which includes
a photoelectric conversion structure that generates charges by photoelectrically converting light; and
a transistor that transfers a pixel signal of a level corresponding to the charges generated in the photoelectric conversion structure,
wherein a phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the phase difference pixel is divided into a plurality of photoelectric conversion structures and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion structures of the phase difference pixel from each other,
wherein the phase difference pixel is divided into four photoelectric conversion structures,
wherein a phase difference detection is performed based on the pixel signals corresponding to charges generated in a pair of the photoelectric conversion structures disposed in an oblique direction, among the four photoelectric conversion structures.
12. An imaging device comprising:
a plurality of pixels each of which includes
a photoelectric conversion structure that generates charges by photoelectrically converting light; and
a transistor that transfers a pixel signal of a level corresponding to the charges generated in the photoelectric conversion structure,
wherein a phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the phase difference pixel is divided into a plurality of photoelectric conversion structures and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion structures of the phase difference pixel from each other,
wherein the phase difference pixel is divided into four photoelectric conversion structures,
wherein a phase difference detection is performed based on the pixel signals corresponding to charges generated in a pair of the photoelectric conversion structures disposed in a vertical direction or a horizontal direction, among the four photoelectric conversion structures.
13. An electronic apparatus comprising:
an imaging device including
a plurality of pixels each of which includes
a photoelectric conversion structure that generates charges by photoelectrically converting light; and
a transistor that transfers a pixel signal of a level corresponding to the charges generated in the photoelectric conversion structure,
wherein a phase difference pixel included in the plurality of pixels include: a plurality of photoelectric conversion structures; and an insulated light shielding film, wherein the insulated light shielding film is embedded in a region for separating, and wherein the insulated light shielding film is between the plurality of photoelectric conversion structures.
14. The electronic apparatus of claim 13 , wherein the photoelectric conversion structures are photodiodes.