Solid-state imaging device and camera system
A solid-state imaging device and a camera system are disclosed. The solid-state imaging device includes a pixel unit and a pixel signal readout circuit. The pixel signal readout circuit includes a plurality of comparators disposed to correspond to a pixel column array, and a plurality of counters. Each counter includes a first amplifier, a second amplifier, and a mirror circuit to from a current mirror in parallel with the second amplifier. The first amplifier includes differential transistors, initializing switches connected between gates and collectors of the differential transistors, and first and second capacitors connected to each of the gates of the differential transistors. The second amplifier includes an initializing switch and a third capacitor. The mirror circuit includes a gate input transistor whose gate is inputted with a voltage sampled by the first amplifier or a voltage sampled by the second amplifier.
1. A solid-state imaging device comprising:
a pixel circuit; and
a pixel signal readout circuit including a comparator, the comparator comprising:
a first circuit including a first transistor that receives a pixel signal from the pixel circuit, and a second transistor that receives a reference signal, and
a second circuit including a third transistor coupled to the first circuit and a first predetermined voltage line, a fourth transistor coupled to the third transistor in series and to a second predetermined voltage line, a fifth transistor coupled to a gate of the fourth transistor and one of a drain or a source of the fourth transistor, and a sixth transistor coupled to the first predetermined voltage line and the fifth transistor in series.
2. The solid-state imaging device according to claim 1 , wherein a gate of the third transistor is coupled to the first circuit.
3. The solid-state imaging device according to claim 1 , wherein the first circuit is configured to perform a comparison operation of the pixel signal and the reference signal.
4. The solid-state imaging device according to claim 3 , wherein the second circuit is configured to output a determination signal according to a result of the comparison operation performed by the first circuit.
5. The solid-state imaging device according to claim 1 , wherein a gate of the first transistor is configured to receive the pixel signal.
6. The solid-state imaging device according to claim 5 , wherein a gate of the second transistor is configured to receive the reference signal.
7. The solid-state imaging device according to claim 1 , wherein the second circuit includes a seventh transistor disposed between a gate of the fourth transistor and a drain or a source of the fourth transistor.
8. The solid-state imaging device according to claim 7 , wherein the third transistor has a first conductivity type; and the fourth, sixth, and seventh transistors respectively have a second conductivity type.
9. The solid-state imaging device according to claim 8 , wherein the first conductivity type is a p-type and the second conductivity type is an n-type.
10. The solid-state imaging device according to claim 1 , wherein a drain of the third transistor is coupled to a drain of the fourth transistor.
11. The solid-state imaging device according to claim 1 , wherein a source of the third transistor is coupled to a source of the fourth transistor.
12. An electronic apparatus comprising:
an optical system;
a solid-state imaging device including;
a pixel circuit; and
a pixel signal readout circuit including a comparator, the comparator comprising:
a first circuit including a first transistor that receives a pixel signal from the pixel circuit, and a second transistor that receives a reference signal, and
a second circuit including a third transistor coupled to the first circuit and a first predetermined voltage line, a fourth transistor coupled to the third transistor in series and to a second predetermined voltage line, a fifth transistor coupled to the a gate of the fourth transistor and one of a drain or a source of the fourth transistor, and a sixth transistor coupled to the first predetermined voltage line and the fifth transistor in series.
13. The electronic apparatus according to claim 12 , wherein a gate of the third transistor is coupled to the first circuit.
14. The electronic apparatus according to claim 13 , wherein the first circuit is configured to perform a comparison operation of the pixel signal and the reference signal.
15. The electronic apparatus according to claim 13 , wherein the second circuit is configured to output a determination signal according to a result of the comparison operation performed by the first circuit.
16. The electronic apparatus according to claim 12 , wherein a gate of the first transistor is configured to receive the pixel signal.
17. The electronic apparatus according to claim 16 , wherein a gate of the second transistor is configured to receive the reference signal.
18. The electronic apparatus according to claim 12 , wherein the second circuit includes a seventh transistor disposed between a gate of the fourth transistor and a drain or a source of the fourth transistor.
19. The electronic apparatus according to claim 18 , wherein the third transistor has a first conductivity type; and the fourth, sixth, and seventh transistors respectively have a second conductivity type.
20. The electronic apparatus according to claim 19 , wherein the first conductivity type is a p-type and the second conductivity type is an n-type.
21. The electronic apparatus according to claim 12 , wherein a drain of the third transistor is coupled to a drain of the fourth transistor.
22. The electronic apparatus according to claim 12 , wherein a source of the third transistor is coupled to a source of the fourth transistor.